Vacuum processing device and film forming device and method using same

ABSTRACT

The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation of application Ser. No. 08/018,390,filed Feb. 17, 1993, now abandoned, which is a continuation-in-partapplication of U.S. application Ser. No. 07/741,526, filed Aug. 12, 1991now abandoned and entitled A VACUUM PROCESSING APPARATUS, AND A FILMDEPOSITION APPARATUS AND A FILM DEPOSITION METHOD BOTH USING THE VACUUMPROCESSING APPARATUS by the inventors herein, the subject matter ofwhich is incorporated by reference herein.

BACKGROUND OF THE INVENTION

The present invention relates to vacuum processing equipment forprocessing a substrate in a vacuum, and also relates to film coatingequipment and a deposition method using the vacuum processing equipmentor film coating device. More particularly, the present invention relatesto such a vacuum processing equipment and a film coating or depositingdevice and method using the same suitable for manufacture ofsemiconductor devices including providing monitoring and control ofprocess temperatures and accurate heating.

In a processing equipment to be used in manufacture of semiconductordevices, accurate control of a process temperature is important in orderto realize a well controlled reaction or the like. A typical example ofsuch a processing equipment wherein the process temperature is the mostimportant setting condition is a furnace such as an oxidizing oven. Theatmosphere in this kind of oven is an oxidative atmospheric airsubstituted atmosphere. This atmosphere is at an atmospheric pressure ora pressure higher than the atmospheric pressure, and a silicon wafer, asan example of a substrate, in the oven is heated by radiation from aheater provided around a quartz tube and by heat conduction through theatmospheric pressure atmosphere in the quartz tube. That is, as a mediumfor conducting heat is present in the quartz tube, temperaturemeasurement can be relatively accurately effected by using a measuringelement such as a thermocouple provided in the heat conductiveatmosphere.

As an example not using the heat conductive medium, a photoresist bakingequipment is known to be used in a step of coating a photoresist whichis used as a mask in an etching step. In this equipment, wherein bakingis carried out in the atmospheric pressure atmosphere, a silicon waferis placed on a heat block heated at a predetermined baking temperature,which heat block has a heat capacity larger than that of the siliconwafer, and the silicon wafer is wholly pressed on the heat block by theatmospheric pressure by use of a vacuum chuck provided on the heat blockside. Accordingly, a temperature of the wafer comes into balance withthe temperature of the heat block, so that the temperature of the wafercan be accurately controlled by a temperature measuring element such asa thermocouple mounted on the heat block. As most of the semiconductormanufacturing processes utilize a highly pure material and a wellcontrolled reaction in a non-dust environment, it is often necessary tocarry out processing in a vacuum.

The use of a lamp heater for heating a Si wafer as an object has beenknown and a measuring and controlling technique for the temperature of asubstrate (e.g., silicon wafer) will be described hereinbelow inaccordance with features of the present invention. Further, a method forforming a wiring film used particularly for a semiconductor device, thatis, LSI and the like will be also described.

Conventionally, accurate temperature control of the wafer in a vacuum ina semiconductor manufacturing device is essentially difficult for thefollowing reasons.

Lamp heating is widely used for heating in a vacuum because it isinexpensive and can be easily installed within a vacuum unit. In thecase where a substrate handled by a vacuum processing equipment is a Siwafer, since the Si wafer is substantially transparent in a considerablywide range of wavelength with respect to a general halogen lamp heateror the like, absorption characteristics of an infrared ray greatlyvaries with the characteristics of a film or the like deposited on thesurface of the Si wafer and with the kind and concentration ofimpurities in the Si wafer, and therefore the heating characteristicsconsiderably vary with wafers.

In the case of heating the wafer with use of a lamp heater, the wafer isheated by only radiation from the lamp heater because no heat conductivemedium is present in a vacuum. Therefore, as is well known, theradiation is slightly absorbed on a metallic specular surface, whilebeing greatly absorbed on a black body. As a result, a degree of heatingof the wafer is largely dependent on a surface condition of the wafer tobe heated or on the kind of and concentrations of the impurities in thewafer.

Lamp heating is simple as previously mentioned. However, in the existingcircumstances, in the case where a heating temperature is desired to becontrolled even slightly by the heating treatment of the Si wafer and inthe case where the kind or state of a silicon substrate are notconstant, lamp heating is hardly useful.

As an applied example quite often used for heating a wafer by a lampheater, there is a processing generally called baking in which a heatingprocessing is carried out in order to eliminate vapor adsorbed to asilicon wafer when the silicon wafer is introduced into the vacuumdevice. In the baking processing, it is usual that the processing iscarried out under wide conditions in order to remove vapor such thatheating is carried out for one minute at a temperature, for example,from 300° C. to 400° C. or so. For such uses, a heating mechanism havinga readiness of lamp heating is therefore preferable.

It has been tried to accurately measure a temperature of the waferduring processing by mounting a thermocouple on the wafer. However,since the measurement of the wafer temperature is carried out under thecondition where the thermocouple is in point contact with the wafer, itis difficult to maintain a stable contact condition of the thermocouple,so that the repeatability in measurement of the wafer temperature islacking. That is, it is required that thermocouples are in physicalcontact with the silicon wafer. However, since these wafers must behandled with extreme care of not being contaminated with foreignparticles of substances, physical contact of the thermocouple and thewafer is not really practical for product wafers.

In the case that the wafer is heated by infrared radiation from the lampheater, there is a possibility that the heat of the wafer is transmittedto the thermocouple by not only heat conduction, but also by radiationfrom the lamp heater directly or through the wafer due to itssemitransparency. Accordingly, accurate measurement of the wafertemperature with use of the thermocouple is difficult.

Further, it has been proposed to forcibly bring a heat conductive mediumin a vacuum. For example, there is described in Japanese PatentLaid-open Publication No. 56-48132 or 58-213434 that a silicon wafer isclamped on a heat block located in a vacuum atmosphere, and a spacebetween the silicon wafer and the heat block is filled with a heatconducting gas under a pressure of about 1 Torr to thereby balance atemperature of the wafer to a temperature of the heat block. In thiscase, the temperature of the heat block can be measured by a temperaturemeasuring element such as a thermocouple mounted on the heat block.

However, as the wafer is clamped to the heat block by a force smallerthan that of a vacuum chuck under the atmospheric pressure, uniformityand repeatability of the wafer temperature to be measured areinsufficient. The greatest drawback in this case is that the heatconductive medium has a low density so as to require much time for heatconduction to take place from the heat block to the wafer. As describedin the above-cited publications several to tens of seconds are requireduntil thermal balance between the heat block and the wafer is reached.Furthermore, the repeatability of the heat conduction time is consideredto be influenced by various factors.

Further, in the above case where the wafer is clamped to the heat block,a clamping member is in physical contact with an upper surface of thewafer, causing contamination of the upper surface of the wafer orgeneration of foreign matter to reduce the yield.

Thus, there are various types of thermometers for measuring a substratetemperature in a vacuum. In an individual processing device for asilicon wafer (a device for processing wafers wafer by wafer), siliconwafers are carried within the vacuum device. Therefore, whatever heatingarrangement is adopted, it is desirable to measure a temperature of thewafer in a vacuum under a non-contact condition. As an example of suchnon-contact measurement, it has been proposed to use an infraredradiation thermometer and measure an intensity of radiation from thewafer in remotely an infrared region.

A prior art technique related to such measurement is described inJapanese Patent Laid-Open Publication No. 1-129966, for example.

In this method, the wafer is placed on a heat stage in a sputteringequipment, and a temperature of the heated wafer is measured by theinfrared radiation thermometer through a hole formed through a targetlocated in opposition to the wafer. That is, an infrared emissivity ofthe wafer at a specific temperature is preliminarily measured with useof another sample for calibration, and a temperature of the wafer duringsputtering is controlled according to the infrared emissivity measuredabove.

The greatest drawback in infrared radiation thermometer temperaturemeasurement is that the emissivity of the object to be measured shouldbe known beforehand. Therefore, emissivity measurement is a mandatorystep for infrared radiation thermometer measurement.

Further, since the infrared radiation thermometer is generally installedin an atmospheric atmosphere, a substrate is measured through a windowformed of a suitable material which causes an infrared ray to permeate.Accordingly, a construction of a seal or the like of vacuum of thevacuum processing device becomes complicated. In consideration ofexpenses for installation of a display unit, a control system and thelike, the provision of a thermometer for accurately measuring asubstrate temperature on the vacuum equipment possibly increases theprice of the equipment and also increases the prices of film electronicparts to be manufactured.

Since the temperature of a substrate is to be measured in a vacuum, andsince the infrared radiation thermometer is not usually able to be usedin a vacuum, the thermometer itself is installed outside of the vacuumchamber, that is, in an atmospheric condition. The infrared radiationthermometer observes the substrate in the vacuum chamber through awindow which has a window material with a sufficiently hightransmittance for the infrared ray spectrum of concern. This windowmaterial seals the atmospheric pressure against the vacuum. Therefore,the installation of the infrared radiation thermometer usually requiresan expense which may affect the final price of the product or the priceof the equipment. The window material described above may have some filmmaterial deposited thereon after a long service resulting in a stainingof the window material. Even in plasma etching equipment, the windowsurface may be attacked by etchants resulting in a rough source, or insome cases film material may be deposited onto the inside surface of thewindow material. These stains or the like lead to a change in thetransmittance for the infrared rays, causing error in the temperaturemeasurement.

If such a stain occurs, an occurrence of an abnormality in measurementcannot be determined by monitoring an indicated value of thethermometer. Further, even in the case where a thermometer itself has anabnormality other than the stain of the window surface, it is sometimesnot always easy to determine such.

Further, the method of using the infrared radiation thermometer yet hassome problems such that the emissivity of the wafer is not alwaysconstant to cause a difficulty in accurate temperature measurement aswill be hereinafter described.

Another silicon wafer on which a thin film of the same metal, e.g.aluminum, as a target material is formed with a thickness of hundreds ofangstroms is used as the calibration sample. A surface of the siliconwafer on which the metal film is formed is observed by the infraredradiation thermometer. However, the infrared emissivity from the surfaceof the wafer to be observed by the infrared radiation thermometer isdependent upon the presence of the metal film. Accordingly, temperaturecontrol of the wafer before film formation cannot be carried out.

Further, also after starting of film formation, accurate temperaturemeasurement cannot be carried out until a desired film thickness (e.g.,hundreds of angstroms) of a metal film (e.g., aluminum film) is reached.

Further, even when the same metal film is formed on the wafer as thecalibration sample and the wafer to be actually processed, the infraredemissivities of the wafers are different from each other in dependenceupon different product lots of the wafers. Accordingly, accuratetemperature measurement and control of the wafer to be actuallysubjected to vacuum processing cannot be effected. Although theconventional vacuum processing device employs various temperaturecontrol arrangements as mentioned above, a process temperature cannot beaccurately determined and controlled.

Further, in a semiconductor material such as a silicon wafer, theinfrared emissivity increases with an increase in temperature. This isdue to the fact that a density of free carriers increases with anincrease in temperature (i.e., metallization) to cause an increase inradiation and absorption. Details in this respect are mentioned in T.Sato; Japanese Journal of Applied Physics, Vol. 6, No. 3 (1967).

To cope with such a change in emissivity with a change in temperature,it is necessary to correct the emissivities at a plurality oftemperatures in the case of effecting temperature measurement with ahigh accuracy. To effect this correction, it may be carried out topreliminarily measure the emissivities at the plural temperatures in atemperature range to be measured. However, such preliminary measurementof the emissivities at the plural temperatures requires additionalheating which unduly increases the number of steps in the process.

That is, an ideal method for temperature control of the wafer with useof the infrared radiation thermometer is to calibrate the infraredradiation thermometer by using the wafer to be actually subjected tofilm formation processing and measure a temperature of the waferirrespective of a difference in infrared emissivity due to the presenceor absence of a film or the condition of the film. However, nopractically applicable devices capable of realizing this ideal methodhave yet been proposed.

Further, in a vacuum processing device having a plurality of vacuumprocessing chambers and a so-called multiple chamber type vacuumprocessing device having a plurality of vacuum processing chambersarranged around a carrier chamber, there are the following problems inthe case of installing a temperature measuring mechanism in the vacuumprocessing chambers themselves. That is, (1) hindrance due topenetration of thermal noise from a heat source in each vacuumprocessing chamber; (2) reduction in vacuum performance of each vacuumprocessing chamber, e.g., an increase in leak potential; (3)contamination of an optical system and generation of dust due torounding of film formation particles; (4) necessity of modification of adesign specification of a vacuum device such as a substrate holder forplacing the substrate in each vacuum processing chamber in the case ofutilizing an existing vacuum processing device; (5) an economic problemsuch that a plurality of temperature measuring mechanisms must beinstalled correspondingly to the vacuum processing chamber.

A most difficult problem in the application of infrared radiationtemperature measurement of semitransparent substrates such as Si wafersto process equipment, such as sputter deposition, plasma etching, or CVDequipment, in which the process changes the emissivity of the substrate,is that the emissivity of the wafer after processing or during aprocessing cannot be known beforehand. As such, time temperaturemeasurement is not possible. For metal deposition processing of a metalfilm or coating onto Si wafers in sputter deposition equipment, theemissivity of the wafer changes considerably upon metal deposition.Before metal deposition, the infrared radiation occurs on both sides ofthe wafer. However, upon metal deposition on one side, there results amirror-like effect on this side and, hence, the radiation does not occuron this metallized side. The radiation from unmetallized side may changeaccordingly. This change in the emissivity cannot be known before thedeposition and no practically applicable techniques have been consideredin the prior art.

In consideration of a solution of a disadvantage in a low level ofcontrollability in the case where a lamp heater as mentioned above isused for heating an Si wafer, it is most understandable to carry outmeasurement of a wafer temperature during heating at real time. However,for example, when an infrared thermometer is used as the thermometer, alight of high brightness from the lamp heater enters as stray light intothe infrared thermometer, giving rise to a problem that it is difficultto perform natural measurement. Furthermore, even if a technique can beapplied in which such a thermometer is mounted without being affected bythe stray light, the available readiness of a lamp heating is possiblyimpaired.

In examining the absorption characteristics of the Si wafer beforecarrying out the lamp heating, this must be achieved by a simpletechnique. If a device which increases the price of the device itself isadded in order to examine the absorption characteristics of the Siwafer, the aforementioned readiness of the lamp heater is possiblyimpaired. Accordingly, a technique is required which adjusts atemperature matching to the characteristics of Si wafer withoutimpairing the readiness of the lamp heater as the heating source.

When a temperature of a substrate such as a silicon wafer during filmdeposition by a sputtering equipment or the like for a film depositionis measured, the step of a film deposition is executed. Therefore, aprudent measure so as not to stain the aforementioned window materialshould be adopted. In addition, even in an etching device, a film issometimes formed on a part of a vacuum unit in dependence upon thereaction gas and the process conditions of etching.

In consideration of the case where when the rear surface of a siliconwafer during film deposition is observed by an infrared radiationthermometer, the silicon wafer is placed in close contact with the stageand an observation hole of the infrared radiation thermometer is presentin a central potion of the stage, if the wafer is well placed in closecontact therewith, film forming particles get mixed into the observationhole during film forming and the observation window material should notbe stained. However, the staining of the observation window materialsometimes gradually proceeds due to an abnormality of a contact degreeor the like.

The technique for preventing a stain, a damage or the like of the windowmaterial is important but the technique for precisely knowing theoccurrence of such abnormality is similarly necessary. Also in the casewhere an abnormality in the thermometer itself should occur, it isnecessary to precisely know such fact as described to prevent anoccurrence of defective products caused by the inaccurate measurement oftemperature.

SUMMARY OF THE INVENTION

It is accordingly an object of the present invention to solve the aboveproblems in the prior art.

It is another object of the present invention to provide an improvedvacuum processing device which can accurately measure and control atemperature of a substrate in a vacuum.

It is a further object of the present invention to provide an improvedfilm coating or forming equipment such as a sputtering equipment and aCVD (Chemical Vapor Deposition) equipment using the above vacuumprocessing device.

It is another object of the present invention to provide a film coatingor forming method utilizing the film coating or deposition device of thepresent invention.

It is a further object of the present invention to provide equipmentutilized with the vacuum processing equipment or film depositionequipment which enables detection of a failure or abnormality intemperature sensing such as a malfunction in the thermometer or windowcontamination.

It is still another object of the present invention to provide a vacuumprocessing equipment enabling improved controllability where a substratesuch as a silicon wafer is heated in a vacuum by a lamp heater and forobtaining high quality and high productivity such as film deposition byway of sputtering.

In accordance with a feature of the present invention, an infraredradiation thermometer is used as primary source for measuring atemperature of each substrate (e.g., silicon wafer), so that thethermometer is calibrated for every substrate. More specifically, beforeprocessing the substrate in a vacuum processing equipment, radiationfrom the substrate is measured at least one temperature by a firstinfrared radiation thermometer, which output signal thereof istransferred to a second radiation thermometer to provide information fortemperature conversion from the output signal of the second thermometer.A correction value may be an emissivity or, for some small range oftemperature, a relation constant. For higher accuracy purposes, or inthe case the emissivity changes greatly with temperature, the radiationmeasurement by the first thermometer maybe carried out for multipletemperatures. A table which shows the relation between the realtemperature and the output signal from the second thermometer may beutilized in a computer software to give the exact temperature.

The temperature calibration stage may be present in the environment ofatmospheric pressure instead of a vacuum. In the environment ofatmospheric pressure, a structure of the device can be made simple ingeneral. Furthermore, in the case of heating or cooling a substratetemperature to a known temperature, the substrate temperature (wafertemperature) can be easily approached to a temperature of a heat block(stage).

More specifically, in the case of setting the temperature calibrationchamber under atmospheric pressure, the substrate may be brought intoclose contact with the heat block having a heat capacity larger thanthat of the substrate by using a vacuum chuck. In this case, thesubstrate temperature can be approached to the heat block temperaturemore accurately and in a short time. Even in the case of not performingpositive heating or cooling with use of the heat block, the use of thevacuum chuck enables the substrate temperature to be quickly balancedwith a stage temperature (i.e., environment or room temperature: 20°C.). Moreover, the vacuum chuck may be replaced by an electrostaticchuck (utilizing lines of electrostatic force).

In the case that a calibration temperature is required to be set at ahigh temperature, there will occur a problem that a surface of thesubstrate is oxidized in dependence upon the atmosphere. Accordingly, itis more preferable that the atmosphere in the temperature calibrationchamber is replaced by an atmospheric air, e.g., nitrogen or argonatmosphere.

When setting the temperature calibration chamber under a vacuum, aheating or cooling gas as a heat conductive medium is interposed underthe pressure of 5 Pa or more between the heat block and the substrate,so as to improve heat conduction therebetween, whereby the substratetemperature can be approached to the heat block temperature in arelatively short time.

In a vacuum processing equipment for forming a thin film on thesubstrate by sputtering, when the substrate in the atmospheric air istaken into a vacuum processing unit of the equipment, it is sometimesnecessary to heat the substrate up to 150° C. or more, so as tosufficiently remove moisture adsorbed on a surface of the substrate, orheat the substrate prior to deposition so as to retain a high substratetemperature during deposition, or cool the hot substrate down to a filmformation start temperature of about 50° C. in the vacuum processingunit. In each case of heating and cooling of the substrate, it isnecessary to accurately measure a temperature of the substrate everytime of temperature control, and it is accordingly necessary topreliminarily calibrate the infrared radiation thermometer for measuringthe temperature of every substrate.

According to the present invention, there is provided a film depositingequipment such as a sputtering equipment or a CVD equipment which isrequired to accurately control a substrate temperature. The film formingdevice is capable of controlling the substrate temperature to a knowntemperature before performing predetermined vacuum processing, measuringradiation from a corresponding substrate to predict the emissivity whenthe wafer undergoes deposition, or after deposition, or in the case thata specular reflector is placed in closed proximity to the substrate orwafer, or measuring an emissivity of the substrate by using a firstinfrared radiation thermometer, and calibrating a single second infraredradiation thermometer or a plurality of second infrared radiationthermometers to be used in the subsequent vacuum processing steps andhaving a function to transfer the correction value to the secondthermometer, on the basis of the result of measurement, whereby thevacuum processing steps can be more suitably applied to electronicparts.

In general, an infrared radiation characteristic of a substance isdependent upon a wavelength. Therefore, more accurate calibration can beeffected by adopting the same wavelength of the infrared region for themeasurements by the first and second infrared radiation thermometers.

When carrying out the measurement of the emissivity of the substrateheated to a known temperature with use of the first infrared radiationthermometer, heating of the substrate to the known temperature in avacuum makes it possible to obviate a so-called baking step for removingmoisture adsorbed on the substrate. Accordingly, it is sometimesadvantageous that the equipment can be reduced in scale.

When heating the substrate in a vacuum processing chamber of asputtering equipment, if the infrared radiation thermometer ispreliminarily calibrated, a lamp may be used instead of a heat block toeffect radiation heating, thereby reducing the cost of the sputteringequipment.

In the case of using a silicon wafer as the substrate, the silicon wafercannot be efficiently heated by an infrared lamp including quartz glass,which is generally widely used, because the silicon wafer is almosttransparent to such infrared region. Further, this kind of infrared lamptends to generate stray light to the infrared radiation thermometer.Therefore, it is more preferable to use a heating lamp capable ofgenerating radiation of short wavelength so as to be efficientlyabsorbed by the silicon wafer.

In the case that a film deposition start temperature of the substrate inthe vacuum processing chamber is lower than a baking temperature of thesubstrate in a vacuum for removing moisture adsorbed on the substrate,it is necessary to cool the substrate in a vacuum unit after baking andadjust the substrate temperature to the predetermined film depositionstart temperature. To realize such a film deposition process with highaccuracy, the present invention provides a sputtering equipmentincluding a stage having a first infrared radiation thermometer forperforming temperature calibration in a temperature calibration chamber,a stage for performing baking of the substrate in a vacuum, a stage forcooling the substrate to a predetermined film deposition temperatureprior to starting film formation, and a second infrared radiationthermometer capable of automatically accurately measuring the substratetemperature on the cooling stage by using a correction value computed onthe basis of an emissivity obtained by the first infrared radiationthermometer.

Once a metal layer is formed on the substrate, the infrared radiationwhich was emitted to this metallized side will be reflected back to theother side of the substrate. This metallized side will be referred to asthe front surface and this unmetallized side as the back side of thesubstrate hereafter. In the case an infrared thermometer is installed inthe backside of the wafer, the emissivity observed by this thermometerchanges greatly upon metal deposition. Further, semitransparentsubstances such as Si wafers change emissivity dramatically duringprocessing and the emissivity during or after the processing is notobtainable prior to the processing. For this reason the infraredradiation thermometer has not yet been adapted widely for thesemitransparent substrate processing.

Further in the heating or cooling stage, the infrared radiationthermometer observes the backside of the substrate through a windowwhich is set in the back side of the substrate. In the case that amirror is placed in the front side of the substrate, this mirroreliminates the stray light which comes through the wafer, and enablesthe radiation measurement under an identical condition as the waferunder deposition. This mirror surface has to be smooth enough for thewavelength of interest. Accordingly, stray light which enters theinfrared radiation thermometer through the substrate can be shielded bythe shutter mechanism.

Further, sometimes staining of the observation window occurs resultingin inaccurate measurement and the present invention enables adetermination of the possibility of such staining or inaccuracies intemperature measurement.

Further, according to the present invention, for solving a problem inpractical use in a multiple chamber type film deposition device, thereis provided a vacuum processing equipment including a vacuum processingchamber having an arrangement for heating or cooling the substrate to apredetermined set temperature, a vacuum film deposition chamber havingan arrangement for deposition a film on the substrate in a vacuum, acarrier chamber having a carrier robot for carrying the substrate to thevacuum processing chamber or the vacuum film deposition chamber, aninfrared radiation thermometer for measuring an emissivity of thesubstrate in the carrier chamber, and a reflector faced to the substrateand having a specular such as a mirror capable of reflecting a radiationheat in a wavelength region to be measured by the infrared radiationthermometer. Furthermore, there is provided a film forming methodincluding the steps of loading the substrate to a vacuum processingequipment, then moving the substrate into a carrier chamber, then movingthe substrate from the carrier chamber into a vacuum processing chamber,then performing predetermined vacuum processing of the substrate in thevacuum processing chamber, and then measuring a temperature of thesubstrate in the carrier chamber. The above-mentioned vacuum processingincludes the steps of heating or cooling the substrate, cleaning thesubstrate, and forming a thin film on the substrate. One of these stepsmay be adopted, or these steps may be adopted in combination.

It is naturally desirable to employ a non-contact measuring method tomeasure a temperature of a substrate such as a wafer within a vacuumprocessing device. The only practical device for such a method asdescribed is an infrared radiation thermometer. An example ofapplication of an infrared radiation thermometer to a vacuum processingdevice is described in the copending application Ser. No. 741,526.However, since the infrared radiation characteristics of a substrate aredifferent one by one, it is necessary to know the radiationcharacteristics of the substrates by some method to carry out theoperation for setting an emissivity (of an object to be measured) inassociation with the infrared radiation thermometer for adjusting thevalue thereof. This operation is hereinafter referred to as calibrationof emissivity. That calibration of the emissivity which is required isthe greatest disadvantage of the infrared radiation thermometer.Additionally, calibration is sometimes difficult in dependence of thecharacteristics of an object to be measured. Further, a device providedwith an infrared radiation thermometer for measuring a non-contacttemperature of a substrate is necessarily provided with apparatus fordetermining emissivity without fail and it is known that an emissivityof an object is conversely an absorption rate of an object.

According to a feature of the present invention, heating power orheating time of a lamp heater is predetermined using the emissivity tothereby make it possible to improve a temperature controllability ofheating by the lamp. That is, a high absorption rate can be expected fora wafer of high emissivity, and therefore the heating power or heatingtime is set to be small while a low absorption rate is expected for awafer of small emissivity, and therefore the heating power is set to belarge and the heating time is set to be long. In this way, heating withhigh accuracy can be executed without impairing the readiness of lampheating.

The temperature of the Si wafer during sputter deposition is one of themost important parameters which determine the characteristics of films.If a sputter deposition equipment is assumed in which the temperature ofthe substrate, such as the Si wafer can be measured by infraredradiation thermometers, as discussed above, such sputtering deviceshould have a unit to know the infrared emissivity of the substratebefore this substrate is brought into the process chambers, and theemissivity during the deposition may be measured by the first infraredthermometer. The substrate temperature is monitored by the secondinfrared radiation thermometer. Sputtering devices used for LSIfabrication such as aluminum deposition usually have a baking process inwhich the Si wafer is heated so that the absorbed water vapor isforcibly evaporated from the wafer. This heating is in many cases doneby lamp heaters for the simplicity and cost reasons. The wafer istransferred to the deposition chamber when the baking process isfinished. Therefore the wafer temperature at the beginning of thedeposition is mostly determined by the final temperature in the bakingprocess. Although it would be advantageous if the baking temperaturecontrol is provided for the lamp heaters which generally have poortemperature controllability for Si wafers, another thermometer and itscontroller, or the complexity of the installation of the thermometerwould lead the higher cost for the sputtering device.

In a vacuum processing device provided with a plurality of thermometersaccording to the present invention, even if a thermometer for asubstrate is not installed at a place where lamp heating is carried out,for example, a time for carrying the substrate to a thermometerinstalled at the other place is known, and a temperature drop aftertermination of heating can be calculated to monitor whether or notheating was normally carried out. In general, in a device provided witha plurality of infrared thermometers according to the present invention,temperatures of substrates are measure by two or more thermometers tomonitor whether or not they are in a rational relationship, and thenormal operation of the thermometers can be monitored.

In the device configuration in which a vacuum unit for carriage and adevice for carrying a substrate from the vacuum unit for carriage to aprocessing unit for each vacuum processing are connected to each other,one or more thermometers are installed on the vacuum unit for carriage,so that a temperature of the substrate is measured before carrying thesubstrate to a vacuum processing chamber and when the substrate iscarried out of the processing unit after termination of said processing,whereby in order to make the number of thermometers installed the leastnumber possible, one thermometer is installed on each vacuum unit forcarriage to enable a reduction of the total number of thermometers.

Suitable heating is applied to a substrate such as an Si wafer beforecarrying out film forming using a simple lamp heating wherebysemiconductor devices having an reproducible characteristic can bemanufactured.

According to another feature of the present invention, a device providedwith an infrared radiation thermometer for non-contact measurement of atemperature of a substrate is provided with apparatus for determiningemissivity without fail. If the emissivity of a substrate is known,heating power or heating time of a lamp heater can be preset. That is,for a wafer of high emissivity, a high absorption rate is expected andthe heating power or heating time is set to be small, while for a waferof small emissivity, the heating power is set to be large or the heatingtime is set to be long. In this way, heating with high accuracy isexecuted without impairing the readiness of lamp heating.

Accordingly, the present invention enables carrying out calibration ofan infrared radiation thermometer and providing information of expectedabsorption characteristics resulting from lamp heating of the substrate.The operating conditions of the lamp heater experimentally obtained inadvance with respect to the emissivity of the substrate are examined,and proper heating conditions by the lamp heater are set with respect toa power source of the lamp heater.

For monitoring thermometers in the vacuum processing device, atemperature of a substrate rises or falls without fail, and therefore,the results of a plurality of thermometers can be directly compared andjudged at once. For this reason, it is necessary to provide a mechanismin which what temperature history occurs in a substrate duringmeasurement by a plurality of thermometers is known, and particularly ina natural cooling during carriage of the substrate, a temperature dropcaused thereby is calculated to compare rationalities of measuredresults by the plurality of thermometers.

Prior to predetermined vacuum processing of the substrate in the vacuumprocessing chamber, the substrate is heated or cooled to a knowntemperature in the temperature calibration chamber, and the radiationfrom the backside of the substrate is measured by the first infraredradiation thermometer. Then, on the basis of the result of measurement,the correction value of the first infrared radiation thermometer iscomputed for the second and the following infrared radiationthermometers, that is, the emissivity of the substrate under depositionor after deposition. Then, on the basis of the result of computation, atemperature of the substrate in the subsequent vacuum processing chamberis accurately measured by a second infrared radiation thermometer. Then,on the basis of the result of measurement, a temperature control systemis operated to set the temperature of the substrate in the vacuumprocessing chamber to a predetermined value, and the vacuum processingsuch as film formation is carried out under the condition where thetemperature of the substrate is accurately controlled.

In the present invention, the provision of the reflection or mirrorshutter in the proximity to the substrate at the time of measurement ofthe substrate temperature has several important roles for the accuratemeasurement of the substrate temperature. That is, the first importantrole is that only with this mirror shutter the emissivity of thesubstrate under deposition can be measured before the substrate has afilm actually deposited thereon, and thus, the shutter makes it possibleto measure the substrate temperature in a real time manner. Thereforethe shutter makes it possible to attain proper temperaturecontrollability. Furthermore mirror the shutter shields stray lightentering the infrared radiation thermometer through the substrate, andthereby prevents measurement error due to the stray light. Additionally,this shutter mechanism is essentially necessary for prediction of theemissivity of a substrate under or after film deposition.

These and other objects, features, and advantages of the presentinvention will become more apparent from the following description whentaken in conjunction with the accompanying drawings which show, forpurposes of illustration only, several embodiments of the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partially sectional block diagram illustrating a schematicconstruction of a vacuum processing device according to an embodiment ofthe present invention;

FIG. 2 is a sectional view of a wafer temperature adjusting stage shownin FIG. 1;

FIG. 3 is a sectional view of a wafer temperature calibration stageshown in FIG. 1;

FIG. 4 is a sectional block diagram illustrating a schematicconstruction of a vacuum processing device according to anotherembodiment of the present invention;

FIG. 5 is a graph showing a temperature profile during film formation;

FIG. 6 is a graph showing a temperature increase characteristic duringAl sputtering according to another embodiment of the present invention;

FIG. 7 is a graph showing temperature measurement of a wafer heated by alamp heater;

FIG. 8 is a sectional view of a lamp heating stage;

FIG. 9 is a graph showing a wafer temperature control method in heatingthe wafer by the lamp heater;

FIG. 10 is a graph showing a wafer temperature at the end of heating inrelation to a heating set temperature;

FIG. 11 is a schematic block diagram illustrating an infrared radiationthermometer in the prior art;

FIG. 12 is a schematic block diagram illustrating an infrared radiationthermometer according to a further embodiment of the present invention;

FIG. 13 is a flow chart illustrating measurement of an emissivity andpreparation of a thermometer output - temperature conversion table;

FIG. 14 is a graph showing a result of measurement of an emissivity of awafer;

FIG. 15 is a schematic block diagram illustrating an emissivitymeasuring device enabling calibration of an emissivity of a waferaccording to another embodiment of the present invention;

FIG. 16 is a plan view of a vacuum processing device of a multiplechamber type according to a further embodiment of the present invention;

FIG. 17 is a cross section of the vacuum processing device taken alongthe line 17--17 in FIG. 16;

FIG. 18 is a sectional view of an optical system for measuring a wafertemperature, provided in a carrier chamber of the vacuum processingdevice shown in FIG. 16;

FIG. 19 is a flow chart illustrating a process flow of vacuum processingto be performed with use of the vacuum processing device shown in FIG.16.

FIG. 20 shows a further embodiment according to the present invention,which is applied to a sputtering film forming device;

FIG. 21 is a graph showing the relationship between emissivity of awafer and heating time by a lamp heater;

FIG. 22 is a graph showing a cooling curve of wafers;

FIG. 23 shows an embodiment of the present invention in the case wheretwo vacuum units are provided;

FIG. 24 is a graph showing cooling curve of silicon wafers;

FIG. 25 shows an embodiment of the present invention which is applied toa device having a plurality of vacuum processing units having a carriagemechanism provided in a central portion thereof; and

FIG. 26 shows an embodiment of a device provided with two carriagechambers according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to the drawings wherein like reference numerals designatelike parts throughout the views, FIG. 1 shows a schematic constructionof a sputtering device of the vacuum processing device according to thepresent invention, wherein a silicon wafer is used as a wafer to besubjected to film formation processing, and an Al thin film is to beformed on the silicon wafer by sputtering. The vacuum processing device1 comprises a wafer temperature calibration chamber 2 including a wafertemperature calibration stage 5, a wafer temperature adjusting chamber 3including a wafer temperature adjusting stage 6 for heating and coolinga wafer 10, and a sputtering chamber 4 including a sputtering stage 7,an Al target 8 and a sputtering electrode 9. These chambers 2, 3 and 4are independently defined and connected with each other through gatevalves GV1 and GV2. Each of the chambers 2, 3 and 4 is formed with anevacuation port connected to an evacuation system for evacuating eachchamber to maintain a predetermined vacuum condition in each chamber. Onthe other hand, each of the chambers 2, 3 and 4 is formed with a gasintroducing port connected to a gas source for supplying a predeterminedgas into each chamber. For example, atmospheric air or a nitrogen gas isintroduced into the wafer temperature calibration chamber 2 to obtain anair or nitrogen substituted atmosphere under an atmospheric pressure.Further, a sputtering gas is introduced into the sputtering chamber 4 toobtain an environment where plasma can be generated by predetermineddischarge. Further, each of the stages 5, 6 and 7 is provided withheating and cooling arrangements to be hereinafter described and anobservation window 19 as a through hole through which infrared radiationradiating from the wafer 10 is observed. First, second and thirdinfrared radiation thermometers 11, 14 and 15 are optically connectedwith the respective observation windows 19 of the stages 5, 6 and 7.Shutters 20, 21 and 22 are provided over the wafers 10 placed on thestages 5, 6 and 7 in the proximity thereto, respectively. Each of theshutters 20 and 21 has a principal surface opposite to or facing thewafer capable of effecting sufficient specular reflection of awavelength of infrared radiation to be measured by each of the infraredradiation thermometers 11, 14 and 15.

The wafer temperature calibration stage 5 is provided with athermocouple 12 for accurately measuring a temperature of the stage 5.The thermocouple 12 and the first, second and third infrared radiationthermometers 11, 14 and 15 are electrically connected to a wafertemperature controller 13. The wafer temperature controller 13 receivesan output from the thermocouple 12 and an infrared radiation of thewafer 10 measured by the first infrared radiation thermometer 11, a unitfor computing and predicting the infrared emissivities of the wafers 10under deposition or after the deposition as a function of temperaturesof the wafer 10 in a temperature range to be measured, on the basis ofthe infrared emissivities for the wafer under deposition or afterdeposition or on the basis of the infrared emissivities measured abovefor the wafer under deposition or after deposition estimated above asthe function of the temperatures of the wafers 10, thereby measuringaccurate temperatures of the wafers 10 on the stages 5, 6 and 7.Further, the wafer temperature controller 13 is connected to the heatingand cooling arrangements provided in the stages 5, 6 and 7, so as tofeed back to the heating and cooling arrangements a command for settingtemperatures of the stages 5, 6 and 7 to predetermined values accordingto the measured data obtained above, thereby controlling thetemperatures of the stages 5, 6 and 7 to the predetermined values. Thus,the wafer temperature controller 13 functions to control temperatures inthe vacuum processing device 1 as a whole.

The functions of the chambers 2, 3 and 4 will now be described. Thewafer temperature calibration chamber 2 has a function of maintainingthe wafer 10 placed on the calibration stage 5 at an environmenttemperature which is normally the same as a temperature of thecalibration stage 5 such as room temperature, estimating an infraredemissivity of the wafer 10 under deposition or after deposition as afunction of wafer temperatures, and obtaining a relation peculiar to thewafer 10 between an electrical output from the thermometer 11 and atemperature.

The wafer temperature adjusting chamber 3 has a function of adjusting atemperature of the wafer 10 before the wafer 10 is carried into thesubsequent sputtering chamber 4. The sputtering chamber 4 has a functionof forming a thin film on the wafer 10 by sputtering.

There will now be described a specific example wherein an Al thin filmis to be formed on the wafer 10 by sputtering using the Al target 8under the condition where a temperature of each stage is controlled tomaintain each wafer 10 at a predetermined temperature.

In the wafer temperature calibration chamber 2 maintained in a vacuumatmosphere, the wafer 10 is brought into contact with the calibrationstage 5 by an electrostatic chuck mechanism, and an Ar gas as a heatconductive medium is introduced under the pressure of 5 Pa into a spacebetween the calibration stage 5 and the wafer 10 by a gas introducingmechanism (not shown) to control a temperature of the wafer 10 to anenvironment temperature or room temperature of 20° C. Then, atemperature of a lower surface of the wafer 10 is observed and measuredby the first infrared radiation thermometer 11 and the thermocouple 12.On the basis of the result of measurement, an infrared emissivity of thewafer 10 under deposition or after deposition or in the case of aspecular reflector placed in close proximity to the wafer is obtained asa function of temperature, and a relation peculiar to the wafer 10between an output from the thermometer 11 and a temperature of the wafer10 is computed by an arithmetic section of the wafer temperaturecontroller 13, thus preparing a thermometer output - temperatureconversion table. The emissivity and the thermometer output -temperature conversion table will be hereinafter described in detail.

Subsequently, in the wafer temperature adjusting chamber 3 and thesputtering chamber 4, processing temperatures of the wafer 10 areobtained by converting electrical outputs from the second and thirdinfrared radiation thermometers 14 and 15 into temperatures with use ofthe thermometer output - temperature conversion table previouslyprepared.

The wafer temperature controller 13 also determines which stage thewafer 10 subjected to temperature measurement on the calibration stage 5is now carried to and placed on, and measures a temperature of the wafer10 now placed on this stage with use of the thermometer output -temperature conversion table.

After ending the calibration of the emissivity for the wafer underdeposition or after deposition, or in the case of a specular reflectorplaced in close proximity to the wafer by the first infrared radiationthermometer 11, the gate valve GV1 is opened to carry the wafer 10 fromthe stage 5 in the calibration chamber 2 to the stage 6 in the wafertemperature adjusting chamber 3 and measure a temperature of the wafer10 placed on the stage 6 by the second infrared radiation thermometer14. According to the result of measurement, a temperature of the stage 6is adjusted by the wafer temperature controller 13 to adjust thetemperature of the wafer 10 to an arbitrary predetermined temperature,e.g., 100° C. Thereafter, the gate valve GV2 is opened to carry thewafer 10 from the stage 6 in the wafer temperature adjusting chamber 3to the stage 7 in the sputtering chamber 4 which is maintained in avacuum condition and to effect measurement of a temperature of the wafer10 by means of the third infrared radiation thermometer 15. According tothe result of measurement, a temperature of the stage 7 is adjusted bythe wafer temperature controller 13 to control the temperature of thewafer 10 to an arbitrary predetermined temperature, e.g., 250° C. Atthis controlled temperature, Al sputtering is carried out to form an Althin film on the wafer 10 placed on the stage 7. As to any wafers (notshown) other than the wafer 10, a thermometer output - temperature underdeposition or after deposition conversion table peculiar to each of theother wafers is prepared in the same manner as the above, and atemperature of each of the other wafers is measured and controlled withuse of the thermometer output - temperature conversion table preparedabove.

As mentioned above, it is essentially necessary to individuallycalibrate the emissivity of each wafer. In the case of using an infraredradiation thermometer for detecting a wavelength region opaque to amaterial, the emissivity does not change irrespective of the presence orabsence of a metal film on an upper surface of the wafer, so that theemissivity can be measured and corrected without using mirror theshutter. Accordingly, in this case, temperature measurement in all thechambers of the vacuum processing device is carried out without usingmirror the shutters.

As a simple arrangement for carrying the wafer 10 among the chambers 2,3 and 4, a carrier mechanism using a heat resistant belt such as asilicone rubber belt may be used.

There will now be described a structure of the wafer temperatureadjusting stage 6 for placing the wafer 10 thereon, a heating andcooling method for the stage 6, and a measuring method for theemissivity of the wafer 10 on the stage 5 with reference to FIGS. 2 and3.

(1) The structure of the stage 6 and the heating and cooling methodtherefor:

Referring to FIG. 2, a heater 18 is installed in the stage 6, and aheating conducting gas is introduced into a space between the stage 6and the wafer 10 in a vacuum atmosphere. A cylinder 16 for guidinginfrared radiation from the wafer 10 to the infrared radiationthermometer 14 and shielding stray light is connected with theobservation window 19 formed through the stage 6 for allowing theinfrared radiation thermometer 14 to measure a temperature of the wafer10. A pair of window plates 27 and 28 formed of a material capable oftransmitting the infrared radiation are mounted on opposite ends of thecylinder 16. The cylinder 16 is cooled so that it is prevented frombeing heated to become stray light generating source. The adverse effectof a stray light can be further reduced by forming a specular surface onan inner wall of the cylinder 16. Further, the mirror shutter 21 isprovided over the wafer 10 in opposed relationship thereto. The mirrorshutter 21 may have any structure meeting the requirements that (1) ithas a specular surface having a reflectivity to infrared radiation and(2) it has a function of shielding a stray light. For example, themirror shutter 21 may be operably driven in synchronism with a timing oftemperature measurement of the wafer 10, mirror shutter 21 may be fixedin a certain area of the chamber and the wafer 10 may be moved to aposition under the shutter 21 at the temperature measurement timing.Further, an electrostatic chuck may be used as the means for bringingthe wafer 10 into contact with the stage 6. Further, in the case ofcooling the wafer 10, the heater 18 may be replaced by a coolingmechanism provided in the stage 6. According to the above structure,there exists no physically contacting element on the upper surface ofthe wafer 10, so that contamination of the upper surface of the wafer 10can be eliminated, and possible generation of foreign matter can begreatly suppressed.

(2) The measuring method for the emissivity:

As shown in FIG. 1, the infrared radiation thermometers 11, 14 and 15are located below the stages 5, 6 and 7, respectively, so as to measurethe radiation of the lower surface of the wafers 10 placed on the stages5, 6 and 7. Further, the cylinder 16 is interposed between each stageand the corresponding infrared radiation thermometer, so as to prevent astray light in each chamber from entering the corresponding infraredradiation thermometer. Further, in measuring the temperatures of thewafers 10, the shutters 20 and 21 capable of reflecting infraredradiation are located over the wafers 10 placed on the stages 5, 6 and 7in the proximity to the upper surfaces of the wafers 10 opposite to thelower surfaces thereof to be observed by the infrared radiationthermometers 11, 14 and 15, respectively.

In measuring the emissivity of the wafer 10 on the stage 5 foremissivity prediction when the wafer undergoes deposition or afterdeposition or in the case a specular reflector is placed in closeproximity to the wafer, it is effective to control the temperature ofthe wafer 10 to an environment temperature (room temperature) withoutheating so that the subsequent processing of the wafers 10 on the stages6 and 7 may not be affected. Therefore, the measurement of theemissivity of the wafer 10 or in the case that a specular reflector isplaced in close proximity to the wafer, with a high S/N ratio isindispensable. FIG. 3 shows a construction of the calibration stage 5enabling the measurement of the infrared radiation for the emissivityprediction under deposition or after deposition, or in the case that aspecular reflector is placed in close proximity to the wafer with a highS/N ratio at the environment temperature (room temperature).

As shown in FIG. 3, the wafer 10 is placed on the calibration stage 5 byan electrostatic chuck and is maintained at a predetermined temperature.This temperature can be an environment temperature or an elevatedtemperature such as 200° C. The radiation level from the wafer is lowwhen the temperature is low, and some measure is required to attain thegood signal to noise ratio in the measurement. The cylinder 16 isconnected with the observation window 19 formed through the stage 5. Aninner wall surface of the cylinder 16 is formed as a specular surface,so as to prevent generation and entrance of infrared radiation (straylight) affecting the measurement. Further, in carrying out themeasurement, the shutter 20 capable of reflecting infrared radiation islocated in the proximity to the upper surface of the wafer 10 oppositeto the lower surface thereof to be observed by the infrared radiationthermometer 11, so as to prevent generation of infrared radiation (straylight) affecting the measurement. Further, in order to prevent infraredradiation from the infrared radiation thermometer 11 itself, thethermometer 11 is cooled to be controlled at a low temperature,preferably 0° C. or lower. Similarly, the cylinder 16 and the mirrorshutter 20 are also controlled at a low temperature to suppress thestray light by infrared radiation to a sufficiently ignorable extent ascompared with the infrared radiation from the wafer 10 maintained at anenvironment temperature (room temperature: normally about 20° C.).

In the case of requiring highly accurate temperature measurement andcontrol as in performing tungsten - CVD, an emissivity measuringtemperature is set to be equal to a CVD temperature, so as to control afilm forming speed with a high accuracy. As a result, highly accuratecorrection of the thermometer 11 can be realized to thereby effecthighly accurate temperature control.

FIG. 4 shows a schematic construction of another embodiment of thesputtering device according to the present invention. In a temperaturecalibration chamber 2, a temperature of a wafer 10 is measured by athermocouple 12, and an emissivity of the wafer 10 when it undergoesdeposition or after deposition is predicted on the basis of radiationmeasurement by the first infrared radiation thermometer 11. Then, anemissivity characteristic peculiar to the wafer 10 when it undergoesdeposition or after deposition and a conversion table showing a relationbetween an output voltage of the thermometer 11 and a temperature areobtained, and temperatures of the wafer 10 in a wafer temperatureadjusting chamber 3 and a sputtering chamber 4 are measured with use ofthe above conversion table. Then, the wafer 10 is carried into a loadlock chamber 23, and the load lock chamber 23 is evacuated. Then, thewafer 10 is carried into the wafer temperature adjusting chamber 3. Inthe wafer temperature adjusting chamber 3, the wafer 10 is heated by alamp heater 25, and a temperature of the wafer 10 is measured by asecond infrared radiation thermometer 14 and is controlled to 400° C.Then, the wafer 10 is carried into the sputtering chamber 4. In thesputtering chamber 4, sputtering is carried out in accordance with atemperature profile shown in FIG. 5 as to form a thin film on the wafer10. A sputtering target 8 has a composition of 1% Si - 3% Cu--Al.

A wafer temperature controller 13 determines which stage the wafer 10subjected to temperature measurement on the calibration stage 5 is nowcarried to and placed on, and measures a temperature of the wafer 10 nowplaced on this stage with use of the thermometer output - temperatureconversion table. Then, on the basis of the result of measurement oneach stage, a temperature of the stage 6 is adjusted by the wafertemperature controller 13 to adjust the temperature of the wafer 10 toan arbitrary predetermined temperature.

In the sputtering chamber 4, a temperature of the wafer 10 is firstcontrolled to 230° C., and a first sputtering is carried out to form anAl thin film having a thickness of about hundreds of angstroms. Then,the first sputtering is stopped once, and the wafer 10 is carried intothe wafer temperature adjusting chamber 3. In the wafer temperatureadjusting chamber 3, the temperature of the wafer 10 is heated to 300°C. by the lamp heater 25 to grow crystal grains in the Al thin filmobtained by the first sputtering, thereby improving orientation or thelike. Then, the wafer 10 is carried again into the sputtering chamber 4,and the temperature of the wafer 10 is set to about 400° C. At thistemperature, a second sputtering is carried out to make the filmthickness up to about 1 μm, thereby obtaining the Al thin film havinglarge crystal grains and improved in orientation. Immediately after thesecond sputtering, the wafer 10 is carried into an unloading chamber 24,and the wafer 10 is quenched to about 50° C., thereby suppressingprecipitation of Si and Cu in the Al thin film.

While there has been described an example that the Al thin film is to beformed on the upper surface of the wafer by sputtering, repeatability ofcrystallization in the thin film can be improved to thereby achieve agood quality of the thin film since temperature control of the wafer canbe effected with a high accuracy through the stage. If the temperatureof the wafer 10 in heating the thin film having the thickness of abouthundreds of angstroms is set to 350° C. or higher, crystallizationcannot be improved. Accordingly, if there does not exist the presentinvention enabling knowledge of an accurate temperature, the filmforming method as mentioned above cannot be industrially achieved.

The vacuum processing device of the present invention is of courseapplicable to any film forming devices such as a CVD (Chemical VaporDeposition) device other than the sputtering device mentioned above.

For instance, the present invention is effective in the case of forminga tungsten film on a silicon wafer as a substrate by a known CVD method.

In such a film forming device, a quality of a thin film to be formed isdependent upon an accuracy of temperature control of the wafer.Accordingly, the film forming device of the present invention canmaintain a good quality of a thin film to be formed on a substrate.

Although the vacuum processing chamber in the vacuum processing deviceof the present invention is employed as the film forming chamber in theabove preferred embodiment, the vacuum processing chamber may beemployed as a dry etching chamber such as a plasma etching chamber. Inthis case, temperature control of a wafer to be etched may be easilyrealized in the same manner as that mentioned in the above embodiment.

There will now be described measurement of a wafer temperature uponsputtering and heating with use of a lamp in the case of employing thevacuum processing device mentioned in a second embodiment forsputtering.

FIG. 6 shows a change in wafer temperature with an elapsed time insputtering. It is apparent from FIG. 6 that the wafer temperature isdependent upon sputtering power.

FIG. 7 shows an example that the wafer 10 is heated by the lamp heater25 in the wafer temperature adjusting chamber 3. FIG. 8 shows anexemplary construction of the stage 6 upon heating of the wafer 10 bymeans of the lamp heater 25. As shown in FIG. 8, the lamp heater 25 islocated over the wafer 10. Only upon temperature measurement of thewafer 10, the shutter 21 is located over the wafer 10 proximate thereto.The infrared radiation thermometer 14 is located under the stage 6. Themirror shutter 21 may have various constructions. For example, themirror shutter 21 may be operably driven in synchronism with a timing oftemperature measurement of the wafer 10, or the mirror shutter 21 may befixed in a certain area of the chamber and the wafer 10 may be moved toa position under the shutter 21 at the temperature measurement timing.In FIG. 7, broken lines show wafer temperatures when the mirror shutter21 is not located over the wafer 10 upon heating of the wafer 10 by thelamp heater 25, so that infrared radiation from the lamp heater 25enters the infrared radiation thermometer 14 as stray light. Therefore,the wafer temperatures shown by the broken lines are not actualtemperatures of the wafer 10. When the mirror shutter 21 is insertedbetween the wafer 10 and the lamp heater 25 upon temperaturemeasurement, the stray light is removed as shown by solid lines in FIG.7, causing a reduction in wafer temperatures measured. The wafertemperatures at this time are the actual temperatures of the wafer 10.Thus, in the case of using the lamp heater 25, the mirror shutter 21 hasa function of removing stray light from the lamp heater 25 upontemperature measurement. During heating the wafer 10 by means of thelamp heater 25, the mirror shutter 21 is retracted from a positionbetween the wafer 10 and the lamp heater 25, so as not to hinder theheating by the lamp heater 25.

FIGS. 9 and 10 show a wafer temperature control method during heating bythe lamp heater 25. A wafer temperature T₀ before start of heating and awafer temperature T₁ at a known elapsed time t from the start of heatingare measured by the infrared radiation thermometer 14 to obtain atemperature increasing speed. Then, assuming that the temperatureincreasing speed is constant after the elapsed time t₁, a remainingheating time t₂ for heating the wafer 10 up to a desired heatingtemperature (set temperature; Ts) is decided. After end of heating, awafer temperature T₂ is measured. As a result, as shown in FIG. 10,wafer temperatures can be controlled with an accuracy of ±2.5° C. forthe set temperatures of 300° C. and 400° C.

There will now be described a correcting method to predict theemissivity when the corresponding wafer undergoes deposition, or afterdeposition, or when a mirror is placed in close proximity to the wafer,a preparing method for a thermometer output - temperature conversiontable, and a measuring method for a wafer temperature, with reference toFIGS. 11 to 14 and Tables 1 to 5.

FIG. 11 shows a construction of an infrared radiation thermometer in theprior art. An output from an infrared radiation thermometer 30 isproportional to a radiation energy, and it has a nonlinear relationshipto an actual temperature. Accordingly, it is necessary to provide alinearizer 38 for linearizing the output from the infrared radiationthermometer 30. Data for linearization by the linearizer 38 can beobtained by numerical calculation from a well-known expression of blackbody radiation. Table 1 shows a relation between an output signalvoltage from the infrared radiation thermometer 30 and a measuredtemperature on the basis of the result of calculation.

                  TABLE 1                                                         ______________________________________                                        Relation between output signal intensity from infrared                        radiation thermometer and measured temperature (emissivity: 1.0)              Black Body Temp. (°C.)                                                                 Output Signai Voltage (V)                                     ______________________________________                                        .               .                                                             .               .                                                             .               .                                                             150             1.700                                                         151             1.705                                                         152             1.710                                                         153             1.716                                                         154             1.722                                                         155             1.730                                                         .               .                                                             .               .                                                             .               .                                                             ______________________________________                                    

An amplifier 36 is provided prior to the linearizer 38. The amplifier 36is provided with a gain adjusting function 37. The emissivityconstitutes a measure representing easiness of radiation from a body inrelation to temperature. For example, a gain of the amplifier 36 may beset to 1 for a body having an emissivity of 1, thereby enablingtemperature measurement. Similarly, the gain of the amplifier 36 may beset to 2 for a body having an emissivity of 0.5, thereby enablingtemperature measurement. Thus, a sensitivity of the infrared radiationthermometer as a whole is adjusted according to an emissivity beforecarrying out the linearization. In the case that an infrared radiationemissivity of some body changes with a change in temperature, the gainof the amplifier 36 shown in FIG. 11 must be changed in concert with achange in temperature. This case will be hereinafter described indetail.

FIG. 12 shows an example wherein a computer is used for signalprocessing of the thermometer shown in FIG. 11, in which thelinearization processing is carried out by digital computation.Referring to FIG. 12, an analog signal from the infrared radiationthermometer 30 is converted into a digital signal by an A/D converter31, and the digital signal is input into a computer 32. The result ofcomputation by the computer 32 is displayed by a display 33 or recordedby a floppy disk 34. Further, the digital output from the computer 32 isconverted into an analog signal for a recorder by a D/A converter 35,and the analog signal is recorded by the recorder.

The measurement of temperature will be described with reference to FIGS.13 and 14. First, an emissivity of the wafer is measured at a knowntemperature by the calibration stage. In the case that the knowntemperature for measurement is T₀, for example, the emissivity isobtained as ε₀. In the case that the wafer is a semiconductor wafer suchas a Si wafer, it is known that at high temperatures of 500° C. orhigher, the emissivity at a temperature of Tmax becomes constant, thatis, the emissivity is converged to ε_(max). The relation between a wafertemperature and an emissivity is obtained by the computer 32 so that theemissivity ε(T) is represented as a function of the wafer temperature Tby linear interpolation. An example of this relation is shown in Table2.

                  TABLE 2                                                         ______________________________________                                        Relation between wafer temperature and emissivity                             Wafer Temp. (°C.)                                                                       Emissivity                                                   ______________________________________                                        .                .                                                            .                .                                                            .                .                                                            150              0.300                                                        151              0.310                                                        152              0.310                                                        .                .                                                            .                .                                                            .                .                                                            599              0.499                                                        600              0.500                                                        ______________________________________                                    

Then, on the basis of the emissivity characteristic peculiar to thewafer, a thermometer output - temperature conversion table peculiar tothe wafer is prepared by the computer 32. This conversion table isprepared as a linear conversion table by computing emissivities with apitch of 0.01 from the theory of black body radiation. The emissivitiesare picked up at a pitch of 1.0° C. of the wafer temperature from Table2, and the conversion table as shown in Table 5 is finally prepared.Temperatures of the wafer in the vacuum processing device 1 areoccasionally measured with reference to this conversion table.

The computation for the preparation of the thermometer output -temperature conversion table shown in Table 5 will now be described withreference to Tables 2 to 5. In Table 2 to 5, the values are virtualdata.

                  TABLE 3                                                         ______________________________________                                        Relation between thermometer output signal intensity and                      converted temperature (emissivity: 0.3)                                       Output signal Intensity (V)                                                                    Converted Temp. (°C.)                                 ______________________________________                                        .                .                                                            .                .                                                            .                .                                                            0.510            150                                                          0.512            151                                                          0.513            152                                                          0.515            153                                                          0.519            154                                                          .                .                                                            .                .                                                            .                .                                                            ______________________________________                                    

                  TABLE 4                                                         ______________________________________                                        Relation between thermometer output signal intensity and                      converted temperature (emissivity: 0.31)                                      Output Signal Intensity (V)                                                                    Converted Temp. (°C.)                                 ______________________________________                                        .                .                                                            .                .                                                            .                .                                                            0.527            150                                                          0.529            151                                                          0.530            152                                                          0.532            153                                                          0.534            154                                                          .                .                                                            .                .                                                            .                .                                                            ______________________________________                                    

                  TABLE 5                                                         ______________________________________                                        Relation between thermometer output signal intensity and                      converted temperature                                                         Output Signal Intensity (V)                                                                    Converted Temp. (°C.)                                 ______________________________________                                        .                .                                                            .                .                                                            .                .                                                            0.510            150                                                          0.530            152                                                          0.532            153                                                          0.534            154                                                          .                .                                                            .                .                                                            .                .                                                            ______________________________________                                    

First, a computing method for the emissivities will now be described.FIG. 14 shows a measured result of a change in emissivity of the waferwith a change in temperature of the wafer. In the case that theemissivity of the wafer is measured at 150° C. to obtain 0.3, linearinterpolation is carried out between the emissivity of 0.3 at 150° C.and the emissivity of 0.5 at 600° C. (which is constant at 600° C. orhigher) to obtain the emissivities as shown in Table 2. Then, from theseemissivities and the relation between a black body temperature and athermometer output, a relation between a thermometer output and a wafertemperature is computed. For example, in the case that the emissivity is0.30, the relation between the thermometer output and the wafertemperature as shown in Table 3 can be obtained, while in the case thatthe emissivity is 0.31, the relation between the thermometer output andthe wafer temperature as shown in Table 4 can be obtained. In comparisonwith Table 1, the thermometer output voltage for the wafer having theemissivity of 0.30 in Table 3 is simply 0.30 times that for the blackbody having the emissivity of 1.0 in Table 1 at the same wafertemperature. Similarly, the thermometer output voltage for the wafertemperature having the emissivity of 0.31 in Table 4 is simply 0.31times that for the black body in Table 1 at the same wafer temperature.These results are natural from the definition of body radiation.

The processing to be executed in the computer will now be described.

It is determined from Table 2 that the emissivity of 0.3 is to beemployed in the wafer temperature range between 150° and 151° C., forexample. Then, it is determined from Table 3 that the thermometer outputvoltage corresponding to the temperature of 150° C. is 0.510 V. Further,at the wafer temperature of 152° C., it is determined from Table 2 thatthe emissivity is 0.310. Accordingly, it is determined from Table 4 thatthe thermometer output voltage corresponding to the temperature of 152°C. is 0.530 V. Such processing is executed in a wafer temperature rangeto be measured. Then, the relation between the thermometer outputvoltage and the wafer temperature in the intended temperature range istabulated as shown in Table 5 which is merely illustrative.

The conversion between the thermometer output voltage and the wafertemperature in the intended temperature range to be measured is carriedout with reference to the conversion table as shown in Table 5.Accordingly, even when the wafer is a semiconductor wafer having anemissivity largely changing with a change in temperature as shown inFIG. 14, it is only necessary to measure an emissivity at an environmenttemperature or one low temperature near the environment temperature,thereby effecting accurate measurement of emissivities over the intendedwafer temperature range to be measured.

A method of measuring an emissivity of an Si wafer as the wafer will nowbe described with reference to FIG. 15, which shows an arrangement formeasuring emissivity of a wafer 10. The wafer 10 is placed on a wafertemperature calibration stage 5. A specular reflector 40 is located overthe wafer 10. The specular reflector 40 must have a sufficiently highreflectivity for an intended wavelength region to be measured. A beamsplitter 41 is located under the wafer temperature calibration stage 5.A reference light generator 42 is provided to generate a referenceoutgoing light 43 having a wavelength of about 10 μm as a main componentby using a suitable filter. The reference outgoing light 43 from thereference light generator 42 is transmitted through the beam splitter 41to enter the wafer 10. A reflected light 44 from the wafer 10 is bent bythe beam splitter 41 to enter a light detector 45. A radiated ortransmitted light above the wafer 10 is reflected by the specularreflector 40, and the entire light is returned to the wafer 10.

In general, an emissivity is equal to an absorptivity α on theassumption that an incident light intensity I_(o), a transmitted lightintensity I_(t) and a reflected light intensity I_(r) are all known, andthe emissivity is expressed as follows:

    α=(I.sub.o -I.sub.t -I.sub.r)/I.sub.o

In the preferred embodiment shown in FIG. 15, the transmitted lightintensity I_(t) is zero because the specular reflector 40 is locatedover the wafer 10. Accordingly, the absorptivity or emissivity of thewafer 10 can be calculated by knowing the incident light intensity I_(o)and the reflected light intensity I_(r) to the wafer 10. In the case ofapplying the emissivity thus calculated to the wafer 10 when itundergoes deposition, or after deposition, or when a mirror is placed inthe close proximity to the wafer before performing vapor deposition of ametal film, an infrared radiation thermometer is located under the wafer10 to measure a temperature of the wafer 10, and the specular reflector40 is located over the wafer 10. However, during or after performing thevapor deposition of the metal film, the specular reflector 40 becomesunnecessary because the metal film itself functions as the specularreflector 40.

Another embodiment of the present invention will now be described withreference to FIGS. 16 to 19, wherein FIG. 16 shows a schematicconstruction (plan view) of a sputtering device applied to the vacuumprocessing device of the present invention. In this preferredembodiment, a silicon (Si) wafer (which will be hereinafter referred toas a wafer) is employed as a substrate to be subjected to filmformation, and an Al or Al alloy thin film (which will be hereinafterreferred to as an Al thin film or Al film) is to be formed on the waferby sputtering as a typical example. Referring to FIG. 16, referencenumeral 50 generally designates a vacuum processing device having asix-chamber construction composed of a wafer loading chamber 51, a waferunloading chamber 52, a vacuum baking chamber 53 as a first vacuumprocessing chamber, a sputter etching chamber 54 as a second vacuumprocessing chamber for removing a natural oxide film or the like presenton a wafer surface, which will cause defective electrical connection ofwiring, before forming the Al film, a sputter film forming chamber 55 asa third vacuum processing chamber for forming the Al film, and a carrierchamber 57 having a carrier mechanism (e.g., an articulated carrierrobot) for carrying a wafer 10 into each vacuum processing chamber andcarrying back the wafer 10 from each vacuum processing chamber aftereach vacuum processing. The carrier chamber 57 is independently definedand connected to these chambers 51, 53, 54, 55 and 52 through gatevalves 58, 59, 60, 61 and 62, respectively. Further, an evacuationsystem (not shown) is connected to each chamber, thereby maintaining apredetermined vacuum condition in each chamber. An infrared lamp heater(not shown) for heating the wafer 10 is provided in the vacuum bakingchamber 53. Each of the sputter etching chamber 54 and the sputter filmforming chamber 55 is provided with a gas introducing port (not shown)for introducing a predetermined gas into each chamber, so as to set anenvironment enabling generation of plasma by predetermined discharge.Further, each of the sputter etching chamber 54 and the sputter filmforming chamber 55 is provided with a heater. While temperaturemeasurement is not carried out during processing in these chambers 54and 55, a heating condition of the heater is set in a constantcondition. In the carrier chamber 57, temperature measurement of thewafer 10 is carried out before and after carrying the wafer 10 into andout of each of the chambers 53, 54 and 55. Further, each of the loadingchamber 51 and the unloading chamber 52 is provided with a gasintroducing mechanism (not shown) for introducing a gas (e.g., nitrogengas or air) into each chamber, so as to restore an atmospheric pressurefrom a vacuum condition in each chamber for the purposes of loading andunloading of the wafer 10. Further, the loading chamber 51 and theunloading chamber 52 are provided with a loading door 63 and anunloading door 64, respectively.

FIG. 17 is a cross section taken along the line 17--17 in FIG. 16 andshows that an infrared radiation thermometer 65 is located under thecarrier chamber 57. The location of the infrared radiation thermometer65 is a temperature measuring position, which is fixed with respect tothe carrier chamber 57. FIG. 18 shows a detailed construction of anoptical system located at the temperature measuring position, wherein anoptical path 66 for temperature measurement is formed between the wafer10 and the infrared radiation thermometer 65. A lower wall 71 of thecarrier chamber 57 is formed with an observation window 67 for allowingthe infrared radiation thermometer 65 to measure a temperature of thewafer 10. A cylinder 68 for shielding stray light is interposed betweenthe wafer 10 and the observation window 67. The cylinder 68 is cooledwith water so that it may not be heated to become a stray lightgenerating source. In order to further reduce an adverse effect of thestray light, an inner wall of the cylinder 68 may be formed into a blackbody. The infrared radiation thermometer 65 is located in theatmospheric air.

Accordingly, the optical path 66 is obliged to pass the boundary betweenthe atmospheric air and the vacuum at the observation window 67. Awindow plate 69 for forming this boundary is provided so as to cover theobservation window 67. The window plate 69 is formed of a materialcapable of efficiently transmitting infrared radiation, such as bariumfluoride, calcium fluoride, or ZnSe (zinc selenium). The window plate 69has a thickness of normally about 5 mm to ensure a strength durable tothe atmospheric pressure. Further, in order to prevent that thesurrounding stray light causing a thermal noise which would enter theinfrared radiation thermometer 65, a reflector 70 is located over thewafer 10 in the proximity of about 1 to 3 mm so that a specularreflecting surface of the reflector 70 is opposed to an upper surface10-1 of the wafer 10. The reflector 70 has a size such that infraredradiation from the upper surface 10-1 of the wafer 10 may be reflectedon the specular reflecting surface of the reflector 70 to sufficientlyenter a region of the optical path 66. Further, the specular reflectingsurface of the reflector 70 and the upper surface 10-1 of the wafer 10are in close to each other to such a degree that the stray light may notenter as a detection noise into the infrared radiation thermometer 65.The reflector 70 may have any structure and be formed of any materialprovided that (1) it has a specular surface having a reflectivity toinfrared radiation and (2) it has a function of shielding stray light.

FIG. 19 shows an example of a process flow to be carried out in thisembodiment, wherein in operation, the wafer 10 is first loaded into theloading chamber 51, then carried into the carrier chamber 57, and thencarried into the vacuum baking chamber 53, in which the wafer 10 isbaked in an evacuated condition. Thereafter, the wafer 10 is carriedback into the carrier chamber 57, and then carried into the sputteretching chamber 54, in which the wafer 10 is subjected to cleaning suchthat a natural oxide film present on the surface of the wafer 10 isremoved. Thereafter, the wafer 10 is carried back into the carrierchamber 57, and then carried into the sputter film forming chamber 55,in which an Al thin film is formed on the upper surface 10-1 of thewafer 10 by sputtering. Thereafter, the wafer 10 is carried back intothe carrier chamber 57, then carried into the unloading chamber 52, andthen unloaded to the atmospheric air. Thus, before and after carryingthe wafer 10 into and out of each vacuum processing chamber, the wafer10 is necessarily carried back into the carrier chamber 57, and atemperature of the wafer 10 is measured at the temperature measuringposition mentioned above in the carrier chamber 57.

More specifically, the loading door 63 is first opened to load a singlewafer or a plurality of wafers into the loading chamber 51 maintained inan atmospheric pressure (step 81). Then, the loading door 63 is closed,and the loading chamber 51 is evacuated down to a predeterminedpressure. Then, the gate valve 58 is opened, and the first wafer istaken by a carrier robot 72 and is carried into the carrier chamber 57.Then, a temperature of the wafer is measured at the temperaturemeasuring position (step 82).

Apparent emissivities from the wafers are different from each other independence upon kinds of semiconductor products and structures and kindsof thin films formed in manufacturing steps previous to the sputter filmforming step in this preferred embodiment. Accordingly, it is necessaryto previously calibrate the emissivities of all the wafers to besubjected to temperature measurement by the infrared radiationthermometer. A perfect black body has an emissivity of 1, and an Siwafer has a relatively low apparent emissivity of 0.2 to 0.5. The Siwafer allows transmission of infrared radiation in a wide wavelengthregion. Accordingly, in the condition where the Al thin film has not yetbeen formed on the upper surface 10-1 of the wafer 10, infraredradiation incident upon the upper surface 10-1 and having beentransmitted through the wafer 10 will enter as stray light into theinfrared radiation thermometer to become a noise component. However,according to the present invention, the reflector 70 is located in theproximity to the upper surface 10-1 of the wafer 10, and the cylinder 68is provided at the temperature measuring position. Therefore, no straylight enters the infrared radiation thermometer, thereby effectingstable radiation measurement without the noise component due to thestray light. Furthermore, infrared radiation radiating from the uppersurface 10-1 of the wafer 10 is reflected on the specular surface of thereflector 70 to enter a lower surface 10-2 of the wafer 10.

Then, the wafer is carried into the vacuum baking chamber 53, and thewafer is baked in the vacuum baking chamber 53 in an evacuated condition(step 83). Then, the wafer is carried back into the carrier chamber 57,and a temperature of the wafer after baking is measured in the carrierchamber 57 in the same manner as the above (step 84). The temperaturemeasured in step 84 becomes a temperature of the wafer before thesubsequent sputter etching process. Then, the wafer is carried into thesputter etching chamber 54, and the wafer is sputter-etched in thesputter etching chamber 54 (step 85). Then, the wafer is carried backinto the carrier chamber 57, and a temperature of the wafer aftersputter-etched is measured in the same manner as the above (step 86).The temperature measured in step 86 becomes a temperature of the waferbefore the subsequent Al sputter film forming process. The wafer is thencarried into the sputter film forming chamber 55, and the Al film isformed on the wafer by sputtering (step 87). Then, the wafer is carriedback into the carrier chamber 57, and the radiation from the wafer ismeasured. This time the wafer has a metal layer on the top surface, andthe mirror is not necessary for the measurement (step 88). Theemissivity has been predicted for this state of the wafer, and thetemperature can be readily obtained from the temperature - radiationconversion table.

After the Al film is formed on the upper surface 10-1 of the Si wafer10, infrared radiation having radiated from the upper surface 10-1 isreflected by the Al film to transmit through the wafer 10 and radiatefrom the lower surface 10-2. As a result, the infrared radiation of thereflected light from the Al film is added to original infrared radiationfrom the lower surface 10-2, thereby greatly increasing an apparentemissivity from the lower surface 10-2 of the wafer 10. Accordingly, inthe conventional temperature measurement by an infrared radiationthermometer, an emissivity calibrated before the film formation processcannot be employed after the film formation process. However, accordingto the present invention, since the reflector 70 has a reflectioncharacteristic equivalent to that of the Al film to be formed on theupper surface 10-1 of the wafer 10, the emissivity preliminarilycalibrated can be employed in all the steps of the process flow shown inFIG. 19 irrespective of the presence or absence of the Al film on theupper surface 10-1 of the wafer 10. Thus, temperature measurement can beeffected without the need of modification of the calibrated emissivity.

As mentioned above, the Al film functions as a very good reflector, thatis, it has a very small emissivity (about 0.01-0.15). Thus, after the Alfilm is formed on the upper surface 10-1 of the wafer 10, an emissivityfrom the upper surface 10-1 becomes very small, so that infraredradiation from the upper surface 10-1 becomes insufficient fortemperature measurement on the side of the upper surface 10-1.Accordingly, if the infrared radiation thermometer is located on theside of the upper surface 10-1 of the wafer 10, the emissivitycalibrated before the film formation process cannot be employed afterthe film formation process because the emissivity from the upper surface10-1 after forming the Al thin film becomes substantially smaller thanthat before forming the Al thin film. Furthermore, in this case, anapparent emissivity from the upper surface 10-1 changes irrespective ofthe use or nonuse of the reflector 70. Accordingly, temperaturemeasurement on the side of the upper surface 10-1 to be subjected to theformation of the Al thin film becomes very difficult. However, accordingto the present invention, the infrared radiation thermometer is locatedon the side of the lower surface 10-2 of the wafer 10 to measure atemperature of the lower surface 10-2 of the wafer 10, and the reflector70 is located on the side of the upper surface 10-1 of the wafer 10,thereby solving the above problems.

After the temperature measurement of the wafer on which the Al film hasbeen formed, the wafer is carried into the unloading chamber 52, and agas such as air or nitrogen gas is introduced into the unloading chamber52 to bring an atmospheric pressure in the unloading chamber 52. Then,the unloading door 64 is opened, and the wafer is taken out of theunloading chamber 52 (step 89). For the next wafer, temperaturemeasurement and vacuum processing are repeated in the same manner as theabove.

It is to be noted that the process flow shown in FIG. 19 is merelyillustrative and various modifications may be made according to thepresent invention. For example, in the case of forming a laminatedwiring film structure, one or more film forming chambers may be added tothe vacuum processing device 50, and temperature measurement and vacuumprocessing may be added to the process flow shown in FIG. 19.

Further, in the process flow, a cooling step for cooling the wafer to apredetermined temperature may be added after the vacuum baking step, thesputter etch cleaning step, and the sputter film forming step.

While the Al thin film is formed on the wafer by sputtering in the abovepreferred embodiment, a metal film may be formed on the wafer bytungsten - CVD, or a laminated multilayer structure of plural metalfilms may be formed on the wafer by sputtering in combination withtungsten - CVD.

Further, while the silicon wafer is employed as the substrate in theabove preferred embodiment, the substrate may be formed of any materialhaving a transparent or semitransparent characteristic to an infraredwavelength, such as a glass wafer mainly composed of silicon oxide oraluminum oxide, or a GaAs (gallium arsenide) wafer.

Additionally, while the measured temperature in the carrier chamber 57is regarded as the wafer temperature before and after the vacuumprocessing in the above preferred embodiment, the measured temperatureat the temperature measuring position in the carrier chamber 57 isstrictly different from the wafer temperature at starting or ending ofeach vacuum processing because a radiation speed is varied with a speedof the carrier robot and an emissivity of the wafer itself. Accordingly,in a process required to take into consideration such a difference intemperature, the temperature measurement at the temperature measuringposition in the carrier chamber may be continued for a given period oftime to calculate a radiation speed, and the wafer temperature atstarting or ending of each vacuum processing may be obtained byextrapolation from the radiation speed calculated above, thus effectingthe temperature measurement with a higher accuracy.

Having thus described a typical example of formation of the Al thin filmon the upper surface of the Si wafer in the above preferred embodiment,it is advantageous that the temperature measurement of the wafer can beperformed with a high accuracy to thereby enable quick knowing of achange in wafer temperature causing a reduction in yield and finallyobtain a high-quality thin film with a high yield.

FIG. 20 shows a further embodiment according to the present invention. Avacuum processing device will be described by way of a sputtering deviceas an example.

A silicon wafer 201 as a substrate is first placed on a heating stage202 having a large thermal capacity, and an emissivity is measured forcalibration. In the heating stage 202, the wafer 201 is heated to apredetermined temperature, and radiation energy at that time is measuredby an infrared radiation thermometer 203 to obtain an infraredemissivity as previously described. In experiments conducted by theinventors, the wafer was heated to 200° C. The wafer is kept inthermally good contact with the stage 202 by a vacuum chuck (not shown)and heated to an accurate temperature. In the measurement of radiationenergy, a shutter in the form of a reflector 204 having a specularsurface with respect to the infrared ray is set opposite to and parallelwith the wafer in consideration that a silicon wafer is substantiallytransparent in a wide region of the infrared ray, and the measurement ofradiation energy is carried out by the first infrared radiationthermometer 203 installed on the rear surface side of the wafer 201.

In the present embodiment, the measurement of radiation energy by thefirst infrared thermometer was carried out in the state of an inertatmosphere (for example Ar gas atmosphere). While in the presentembodiment, the set temperature was 200° C., it is to be noted thatelimination of the step of heating processing subjected to the waferother than the heating processing necessary for process is advantageousin view of elimination of variation factors of product characteristics.Accordingly, the measurement of radiation energy can be also made bycontrolling the wafer to an environment temperature, for example a roomtemperature.

Subsequently, the wafer is introduced into a vacuum unit by suitablecarriage arrangement (not shown) and subjected to lamp heating withinthe first vacuum unit 205. The first vacuum unit 205 is vacuum-exhaustedby suitable evacuation means. The vacuum unit 205 will be furtherdescribed. A heating lamp heater 206 is installed on the rear surface ofa wafer 201', mirror shutter in the form of a reflector 207 having aspecular surface similar to that used at the time of calibration isdisposed with respect to the surface of the wafer 201'. In this case,however, the mirror shutter 207 must have a size sufficient to cover theentire wafer in order to obtain a good heating distribution. The heatingby the lamp heater 206 is carried out under the conditions substantiallysimilar to that when the emissivity is measured as described above.

The control of the lamp heater will now be described. An output of thefirst thermometer 203 is supplied to an emissivity calculation circuit208. The emissivity outputted from the circuit 208 is supplied to a lampheater control power source 209. In FIG. 21, the ordinate 210 indicatesa heating time when a power applied to the lamp heater 206 is 2kilowatt, and the abscissa 211 indicates an emissivity of a waferdetermined by the aforementioned method. In the lamp heater controlpower source 209, upon reception of the emissivity, there is determineda heating time required to reach a set temperature in the case where apower applied to the lamp heater is constant in accordance with therelationship of a curve 212 shown in FIG. 21. That is, in the case wherethe wafer has a high emissivity, heating is carried out in a shorterperiod of time. In an experiment conducted by the inventors, a heatinglamp was used in which a target heating temperature is set at 350° C.and a power applied to the lamp is 2 kilowatt, and heating was carriedout for one minute, after which the heating power source is cutoff.While in the aforementioned embodiment, the heating time has been acontrol parameter, it is to be noted that the temperature of the waferheated by the lamp heater can be controlled even by controlling aheating power with the heating time set to be constant or by controllingboth the heating time and power.

The curve 212 shown in FIG. 21 indicates that values are varied even byan optical system, a thermometer and the like for measuring emissivity,and the power necessary for heating also greatly varies in value due toa geometrical relation of a heater. Further, the radiation wavelengthcharacteristic from the lamp also changes due to the power applied tothe lamp heater, and a change of absorption characteristics caused bythe wafer occurs. Therefore, it is necessary to experimentally determinethe characteristics shown in FIG. 21.

In the configuration of the equipment shown in FIG. 20, wafers can becontinuously processed. For example, when the emissivity of a secondwafer is measured, the first wafer is being subjected to lamp heating inthe first vacuum unit. Accordingly, information obtained at the time ofcalibration is once stored and then sequentially used for individualwafers. The function block having a function for handling the order ofwafers as described is not particularly shown. A wafer for which filmforming processing has been terminated is carried out to atmosphere froma unloading vacuum unit which is a third vacuum unit 219.

The wafer heated to a predetermined temperature (350° C. in thisembodiment) as described above is guided to a second vacuum unit 213 forsputter film deposition by a suitable carriage unit (not shown). In thesecond vacuum unit 213, an aluminum film is formed on a wafer 201" by asputter electrode 214. In this vacuum unit 213 a second thermometer 215is installed on the rear surface side of the wafer 201". When filmdeposition starts, an aluminum film is formed on the surface of thewafer. Because of this, the infrared radiation characteristic changesfrom that before starting of film deposition. A mirror in the form of areflector 204 having a specular surface to imitate the depositionaluminum metal film at the time of calibration was used to obtain avalue of emissivity in which the change of the radiation characteristicis predicted. Accordingly, when film deposition starts, an equivalentreflector is provided by the deposited aluminum metal film, and propertemperature measurement can be made by the second thermometer 215installed on the rear surface of the wafer 201". More specifically, theemissivity predicted at the time of the calibration with an aid of themirror body may be a value of emissivity of the wafer when it undergoesdeposition, or after deposition, or when a mirror is placed in closeproximity to the wafer for the second thermometer 215 or followingthermometers. Upon receipt of output from the first thermometer, aradiation arithmetic circuit 208 outputs an emissivity for thecorresponding wafer when it undergoes deposition, or after deposition,or when a mirror is placed in close proximity to the wafer. This outputis supplied to a control unit 216 of the second thermometer 215 toautomatically set the emissivity. Also in this case, time when theemissivity is measured is deviated from time when temperature ismeasured using the emissivity, and therefore, the control unit 216functions for sequentially using the emissivity.

In FIG. 20, a comparison unit 217 compares a target heating temperatureset to the control power source 209 of the lamp heater 206 with a wafertemperature determined by the second thermometer 215 and the controlunit 216 to compare whether or not the relationship therebetween is in arational range. More specifically, the wafer is heated by the lampheater 206 and supplied to the second vacuum unit 213 for sputter filmdeposition. During that period, the temperature of the wafer is loweredby radiation cooling while it is present in a vacuum environment. Therate of the cooling is slow as compared with the carriage time of thewafer, and film forming starts from the time required for carriage ofthe wafer. That is, a temperature at the time at which measurementstarts can be expected by the second thermometer 215.

FIG. 22 shows a cooling curve experimentally obtained. Since the coolingis naturally affected by the emissivity of the wafer, cooling curveswere obtained for wafers having different emissivities. However, theemissivity used here was measured from the rear surface of the wafer,and the cooling from the surface of the wafer is not taken intoconsideration. Further, the cooling curve is largely influenced also bythe ambient environmental temperature. It is therefore necessary toexperimentally determine the relationship shown in FIG. 22.

The comparison mechanism 217 has data as shown in FIG. 22 stored thereinand estimates a temperature at which measurement starts by the secondthermometer 215 from an emissivity from the emissivity arithmeticcircuit 208, a target heating temperature set to the control powersource 209 and a time required for carriage of the wafer and comparesthe temperature with a temperature actually obtained by the secondthermometer 215. If these temperatures are in a rational range of error,it is considered that heating operation was properly carried out.Conversely, in the case where these temperatures depart from a rationalrange of error, a disorder of thermometers, a disorder of the lampheater or an abnormality such as a stain of the observation windowresulting from entry of aluminum grains as a film forming material intoportions other than the desired portion possibly occur, and therefore, awarning is given by a display device 218 so as to call an operator'sattention thereto.

FIG. 23 shows another embodiment of the present invention, in which twovacuum units adjacent to each other are provided with infrared radiationthermometers, respectively. A silicon wafer 241 is heated by a lampheater 243 in a first vacuum unit 242 and introduced into a secondvacuum unit 244 by a suitable carriage unit (not shown). The wafer 241,before being carried from the first vacuum unit 242 is measured intemperature by an infrared radiation thermometer 245 and a movableshutter such as specular surface reflector 246 provided in the firstvacuum unit 242. Only at the time of measuring a temperature, thespecular surface reflector 246 is positioned with respect to the surfaceside of the wafer 241, and at the time other than the above, it can bewithdrawn to a location not impairing heating by the lamp heater.

A time t required for the wafer 241 to be carried from the first vacuumunit 242 to the second vacuum unit 244 is substantially predetermined,and data as shown in FIG. 24 indicating the wafer temperature and a dropin temperature of the wafer by cooling during carriage time areexperimentally prepared in advance so that a temperature when the waferis introduced into the second vacuum unit 244 can be calculated. Anoutput of the infrared radiation thermometer 245 in FIG. 23 is appliedto a cooling temperature computation unit 247. Since sputter filmforming is carried out in the second vacuum unit 247, a temperatureobserving window material in this vacuum unit 244, a temperatureobserving window material in this vacuum unit possibly becomes stainedas mentioned above. The wafer 241 arrives at the second vacuum unit 244and is immediately subjected to sputter film deposition. In thisembodiment, an aluminum film was deposition. The film deposition startsand a temperature at that time is measured by an infrared thermometer248 arranged so that observation is carried out from the rear surface.

The time t required from arrival of the wafer 241 at the second vacuumunit 244 to subjection to film forming is supplied to the coolingtemperature computation unit 247 to calculate a temperature drop portionΔT caused by cooling using a data base as shown in FIG. 24. The ΔT fromthe cooling temperature computation unit 247 and an output of athermometer 248 provided on the second vacuum unit 244 are applied to atemperature comparison determination unit 250. In the temperaturecomparison determination unit 250, if both numerical values are in apredetermined range of allowance, the operation of both thermometers isjudged to be normal. If these values are not in the range, informationof the effect that an abnormality occurs in either thermometer isdisplayed on a display unit 251 to inform a user of the equipment ofsuch possibility as an abnormality of the thermometers. It is possibleto easily stop processing wafers by the present vacuum processingequipment in accordance with such information. The information isoutputted to the outside, i.e., a host control equipment (not shown) ofthe present vacuum processing equipment. The control equipment can usethe information to stop processing wafers and diagnose possibleabnormalities of the present vacuum processing device.

FIG. 25 shows another embodiment according to the present invention, inwhich a plurality of vacuum units 261 to 263 for carrying out vacuumprocessing are provided, and these vacuum units 261 to 263 are providedwith vacuum carriage chambers 265 in which a central portion is providedwith a handling robot mechanism 264 for carrying a wafer, the vacuumunits being connected. The vacuum carriage chamber 265 is provided witha thermometer 266. The vacuum processing chamber 261 serves to carry outsputter etching processing and is not provided with a thermometer. Thevacuum processing chambers 262 and 263 are sputter film depositedchambers, which are provided with infrared radiation thermometers 267and 268. In the FIG. 25 an embodiment, a wafer is first subjected tosputter etching in the vacuum unit 261, and the wafer subjected to TiWsputter film deposition by the vacuum unit 262 is then subjected toaluminum sputter film deposition in the vacuum unit 263. The wafer iscarried from one vacuum unit to the succeeding vacuum unit by thehandling robot mechanism 264. At this time, the wafer is carried to aplace where the thermometer 266 provided in the vacuum carriage chamber.The temperature is again measured in each of the vacuum units. Thetemperature of the wafer is calculated from the time required for thecarriage (precisely, the time required to start film deposition in thevacuum unit) and the temperature measured by the thermometer 266, andthe temperatures measured in the vacuum units 262 and 263 aretransmitted to a temperature comparison determination mechanism 269 tojudge the normal operation of the thermometers. This judgement isdisplayed on a display unit 270, and if an abnormality is present, auser of the device is informed thereof.

FIG. 26 shows another embodiment according to the present invention. Inthis embodiment, a plurality of vacuum units 271 to 275 are provided. Inthese vacuum units 271 to 272 and vacuum units 273 to 275, vacuumcarriage chambers 278 and 279 are present in which central portions areprovided with handling robot mechanisms 276 and 277 for carrying asilicon wafer 210, and the carriage chambers are connected to the vacuumunits. The carriage chambers 278 and 279 are connected to each other bya vacuum unit 280, and the wafer 201 can be freely moved to and from thecarriage chambers 278 and 279 through the vacuum unit 280 by thehandling robot mechanisms 276 and 277. The vacuum processing chamber 271serves to carry out lamp heating process, the vacuum processing chamber272 serves to carry out sputter etching processing, and the vacuumprocessing chambers 273 to 275 are sputter film deposition chambers. Inthe present embodiment, the vacuum carriage chambers 278 and 279 areprovided with thermometers 281 and 282, respectively, and the vacuumprocessing chambers 271 to 275 are not provided with thermometers.

In the FIG. 26 embodiment, the wafer 201 is first subjected to vacuumbaking in the vacuum processing chamber 271 and subjected to sputteretching in the vacuum unit 272. The wafer 201 after being subjected toTiW sputter film deposition in the vacuum unit 273 is then subjected toaluminum sputter film forming in the vacuum unit 274 and thencesubjected to TiW sputter film forming in the vacuum unit 275.

The wafer 201 is carried from one vacuum processing unit to thesucceeding vacuum processing unit by the handling robot mechanisms 276and 277. At this time, the wafer 201 is carried to a place (atemperature measuring position) where the thermometers 281 to 282provided in the respective vacuum carriage chambers are installed tomeasure a temperature. A wafer temperature at the time of each vacuumprocessing is calculated from the time required for the carriage(precisely, the time required for subjection to vacuum processing suchas lamp heating, film deposition, etc. in the vacuum units or requiredfor movement of the wafer from the termination of these vacuumprocessings to measuring positions of the thermometers 281 and 282 andthe temperatures measured by the thermometers 281 to 282 inconsideration of cooling data of wafer temperatures as shown in FIG. 24from a cooling temperature computation unit (not shown). At this time,the wafer temperatures obtained by the thermometers 281 and 282 of thecarriage chambers 278 and 279 are transmitted to a comparisondetermination unit 283 for comparison thereof, and the normal operationof the thermometers is judged in consideration of the carriage timebetween two temperature measuring positions within the vacuum carriagechambers. This judgement is displayed on a display unit 284, and if anabnormality is present, a user of the device is informed thereof.

While in the above-described embodiment, no thermometer is installed inthe vacuum processing chambers themselves, it is to be noted thatthermometers are installed on vacuum processing chambers themselves asin the embodiment shown in FIG. 25 and the embodiments shown in FIGS. 25and 26 may be combined.

According to the present invention, accurate temperature measurement andtemperature control of a substrate in vacuum can be effected to realizea vacuum processing device which can accurately control a temperature ofthe substrate. In the case of applying the present invention to a filmforming device, accurate temperature control of the substrate necessarybefore and after deposition a film and during deposition the film on thesubstrate can be easily effected to realize formation of the film with ahigh quality. Further, according to the present invention, particularlyin a vacuum processing device of a multiple chamber type, accuratetemperature control of a substrate can be effected, and formation of ahigh-quality thin film can be continuously controlled to greatly reducea final fraction of defective products.

As is apparent advantageous effects obtained by the present inventioninclude stability and improvement of quality in order that a substratecan be heated in a stable manner. As a further great effect, animprovement in productivity can be mentioned. This will be describedhereinbelow.

In the case where a lamp heater is not at all controlled, in order tomake a temperature at the time of starting film deposition constant,wafers are cooled for a sufficient period of time, after being heated ina first vacuum unit, until a predetermined temperature is obtained. Thatis, it is necessary to sufficiently heat all wafers to remove moisturetherefrom, but heating temperatures may be different according to theindividual wafers as previously mentioned. If natural cooling is carriedout for a long period of time, temperatures of all the wafers afterbeing cooled gradually come close thereto, and the temperatures can bemade constant. Of course, there was a drawback in that the productivityis impaired due to an occurrence of the waiting time.

Temperatures of wafers introduced into a second vacuum unit aredifferent from one another, and it is necessary to provide a waitingtime until a certain temperature is obtained in order to make thetemperatures constant. Even if the temperatures of wafers should bemeasured accurately to some extent before film deposition, it isessentially difficult to improve this point merely by the temperaturemeasurement in the second vacuum unit for carrying out sputtering.

In the device according to the present invention, the temperature of awafer at the time of being introduced into the second vacuum unit isconstant, and the waiting time as described above need not be set andthe productivity will not be impaired.

Further, even in the case where the film forming temperature should be atemperature higher than a level to some extent, film deposition iscarried out immediately after heating, and extra heating need not becarried out according to the present invention. In the conventionaldevice, the step of cooling is provided, and it is necessary to heat awafer at an extremely high temperature at once. Since thecontrollability is not present in this heating action, the substrateitself may possibly be damaged. Therefore, the conventional devicesometimes fails to respond to a demand in terms of quality such that afilm forming starting temperature cannot be set to a high level.

As described above, the controllability of the substrate temperatureaccording to the present invention such as the improvement inproductivity, the improvement in quality of products, etc. has obviouseffects.

By always confirming the normal operation of the thermometers formeasuring the temperature of the substrate in vacuum, the capability forearly finding an abnormality of indications of thermometers is provided,thereby considerably improving the operating reliability of the vacuumprocessing device. Thereby, there is substantially no case where a largevolume of defective products are manufactured without becoming aware ofan occurrence of deviation in temperatures.

While we have shown and described several embodiments in accordance withthe present invention, it is understood that the same is not limitedthereto but is susceptible of numerous changes and modifications asknown to those skilled in the art and we therefore do not wish to belimited to the details shown and described herein but intend to coverall such changes and modifications as are encompassed by the scope ofthe appended claims.

What is claimed is:
 1. A processing device for processing of a substratecomprising:at least one infrared radiation thermometer for measuring asubstrate temperature for processing of the substrate; means fordetermining an infrared emissivity of the substrate in accordance withan infrared emissivity at a temperature of at least 500° C.; means fordetermining a calibration of the infrared radiation temperature withrespect to the substrate; means for heating the substrate; and means fordetermining heating conditions of the heating means on the basis of thedetermined infrared emissivity of the substrate.
 2. A processing deviceaccording to claim 1, wherein the at least one infrared radiationthermometer includes a first infrared thermometer for measuring emittedradiation from a rear side of said substrate.
 3. A processing deviceaccording to claim 1, further comprising means for forming a film on thesubstrate.
 4. A processing device according to claim 3, wherein thesubstrate is a silicon wafer.
 5. A processing device according to claim1, including vacuum processing means for vacuum processing of thesubstrate.
 6. A processing device according to claim 5, wherein a memberhaving a specular surface is disposed with respect to a front surface ofthe substrate.
 7. A processing device according to claim 1, wherein thelamp is positioned with respect to a rear surface of the substrate fortreating of the substrate.
 8. A processing device according to claim 1,further comprising means for determining the heated results according tothe heating conditions so as to determine that an operation relating tothe heating is properly carried out.
 9. A processing device according toclaim 1, wherein the determining means for determining the infraredemissivity of the substrate includes means for maintaining the substrateat a predetermined temperature.
 10. A processing device according toclaim 1, further including means for depositing a film on the substrate.11. A processing device according to claim 1, wherein the means fordetermining an infrared emissivity of the substrate and the means fordetermining a calibration of the infrared radiation temperature withrespect to the substrate effects the determination prior to effectingprocessing of the substrate by forming a film thereon.
 12. A processingdevice according to claim 11, wherein the means for determining heatingconditions of the lamp determine the time length of heating at aconstant power of the lamp for processing of the substrate.
 13. Aprocessing device according to claim 1, further comprising means forintermittently positioning a member having a specular surface disposedwith respect to a front surface of the substrate proximate to the frontsurface of the substrate as representative of a film formed on thesubstrate to enable emissivity determination of the substrate.
 14. Aprocessing device according to claim 1, wherein the means fordetermining a calibration includes means for generating a relation tableas a function of temperature.
 15. A processing method for a substratecomprising the steps of:measuring radiation heat radiated from asubstrate having a known temperature by a first infrared radiationthermometer; transferring the substrate to a stage for mounting thereon,the stage being provided with heating means; and obtaining a heatingtime required to make a temperature of the substrate mounted on thestage reach a target temperature, and controlling the heating means,with reference to a graph which is previously prepared and stored on thebasis of emissivity of the substrate at a known temperature provided bythe first infrared radiation thermometer, the graph being representativeof a relation between the emissivity of the substrate and a heating timerequired to make the temperature of the substrate reach the targettemperature with a constant electrical power being supplied.
 16. Aprocessing method according to claim 15, further comprising the steps ofproviding a shutter proximate to an opposite surface of the substratehaving the known temperature, the shutter enabling specular reflectionrelative to a wavelength of an infrared ray radiated from the substrateto be measured.
 17. A processing method according to claim 16, furthercomprising the steps of preparing, on the basis of an emissivity of thesubstrate at the known temperature which emissivity is obtained by thefirst infrared radiation thermometer, a relation table representative ofa relation between the substrate temperature within a temperature rangeto be measured and an estimated output value of an infrared radiationthermometer when the substrate is at the known temperature and storingthe relation table, transferring to a temperature measuring stage thesubstrate which is controlled to make the substrate reach the targettemperature, measuring a radiation heat radiated from the oppositesurface of the substrate by a second infrared radiation thermometer,obtaining a temperature of the substrate from an output of the secondinfrared radiation thermometer with reference to the relation table, andcomparing the temperature of the substrate with the target temperatureof the heating controlling section and determining whether a heatingoperation is appropriate.
 18. A processing method according to claim 17,wherein the step of preparing a relation table includes obtaining theemissivity of the substrate at the known temperature from an output ofthe first infrared radiation thermometer, obtaining a relation betweenthe temperature and the emissivity of the substrate which linearlyapproximates a relation between the emissivity of the substrate and theemissivity of the substrate which takes on a constant value when thesubstrate is at a proper temperature, preparing on the basis of a theoryof black body radiation, the relation table representative of therelation between the substrate temperature within the temperature rangeto be measured and the estimated output value of an infrared radiationthermometer when the substrate is the known temperature.
 19. Aprocessing method for a substrate comprising the steps of:measuring aradiation heat radiated from a surface of the substrate by a firstinfrared radiation thermometer; preparing, on the basis of an emissivityof the substrate at a known temperature, a relation table representativeof a relation between a substrate temperature within a temperature rangeto be measured and an estimated output value of an infrared radiationthermometer when the substrate is at the known temperature duringformation of a film thereon, and storing the relation table;transferring the substrate for mounting to a stage provided with meansfor heating or cooling the substrate mounted thereon, for measuring aradiation heat radiated from the surface of the mounted substrate by asecond infrared radiation thermometer; and obtaining a temperature ofthe substrate from an output of the second infrared radiationthermometer with reference to the relation table and for controllingsaid heating or cooling means so as to enable a temperature of thesubstrate to reach a target temperature.
 20. A processing methodaccording to claim 19, further comprising the step of performingfilm-formation processing of the substrate to form a film thereon afterthe substrate has reached the target temperature.
 21. A processingmethod according to claim 19, further comprising the steps of providinga shutter proximate to an opposite surface of the substrate for enablingspecular reflection relative to a wavelength of an infrared ray radiatedfrom the substrate to be measured by the first thermometer, andproviding another shutter proximate to the opposite surface of thesubstrate mounted on the stage only during temperature measurement andfor enabling specular reflection relative to the wavelength to bemeasured by the second thermometer.
 22. A processing method according toclaim 21, wherein the step of preparing a relation table includesobtaining the emissivity of the substrate at the known temperature froman output of the first infrared radiation thermometer, obtaining arelation between the temperature and the emissivity of the substratewhich linearly approximates a relation between the emissivity of thesubstrate and the emissivity of the substrate which takes on a constantvalue when the substrate is at a proper temperature, preparing on thebasis of a theory of black body radiation, the relation tablerepresentative of the relation between the substrate temperature withinthe temperature range to be measured and the estimated output value ofan infrared radiation thermometer when the substrate is the knowntemperature.
 23. A processing method according to claim 21, wherein thesubstrate is a silicon wafer.
 24. A processing method according to claim19, wherein the step of preparing a relation table includes obtainingthe emissivity of the substrate at the known temperature from an outputof the first infrared radiation thermometer, obtaining a relationbetween the temperature and the emissivity of the substrate whichlinearly approximates a relation between the emissivity of the substrateand the emissivity of the substrate which takes on a constant value whenthe substrate is at a proper temperature, preparing on the basis of atheory of black body radiation, the relation table representative of therelation between the substrate temperature within the temperature rangeto be measured and the estimated output value of an infrared radiationthermometer when the substrate is the known temperature.
 25. A methodfor processing of a substrate comprising the steps of:determining aninfrared emissivity of the substrate at a temperature below atemperature at which the substrate exhibits a substantially constantemissivity; generating a relation table as a function of temperaturebased upon the determined infrared emissivity and the substantiallyconstant emissivity; and controlling processing of the substrate inaccordance with the generated relation table.
 26. A method according toclaim 25, wherein the step of generating a relation table includesgenerating an emissivity table.
 27. A method according to claim 25,wherein the steps of generating a relation table include generating arelation table for a plurality of different substrates.
 28. A methodaccording to claim 25, wherein the step of generating a relation tableincludes generating the relation table on the basis of the determinedemissivity of the substrate at the temperature which is a knowntemperature as obtained by the determining means and generates therelation table representative of a relation between a substratetemperature within a temperature range to be measured and an estimatedoutput value of an infrared radiation thermometer when the substrate isat the known temperature during formation of a film on the substrate,and for storing the relation table.
 29. A processing device forprocessing of a substrate comprising:means for determining an infraredemissivity of the substrate at a temperature below a temperature atwhich the substrate exhibits a substantially constant emissivity; meansfor generating a relation table as a function of temperature based uponthe determined infrared emissivity determined by the determining meansand the substantially constant emissivity; and means for controllingprocessing of the substrate in accordance with the generated relationtable.
 30. A processing device according to claim 29, wherein the meansfor generating a relation table generates an emissivity table.
 31. Aprocessing device according to claim 29, wherein the means forgenerating a relation table generates a relation table for a pluralityof different substrates.
 32. A processing device according to claim 29,wherein the means for generating a relation table generates the relationtable on the basis of the determined emissivity of the substrate at thetemperature which is a known temperature as obtained by the determiningmeans and generates the relation table representative of a relationbetween a substrate temperature within a temperature range to bemeasured and an estimated output value of an infrared radiationthermometer when the substrate is at the known temperature duringformation of a film on the substrate, and for storing the relationtable.
 33. A processing device according to claim 32, wherein the meansfor determining an infrared emissivity of the substrate includes a stagefor mounting thereon the substrate having the known temperature, ashutter provided proximate to a surface of the substrate for enablingspecular reflection relative to a wavelength of an infrared ray radiatedfrom the substrate to be measured, and a first infrared radiationthermometer for measuring a radiation heat radiated from an oppositesurface of the substrate mounted on the stage.
 34. A processing deviceaccording to claim 33, further comprising a substrate temperatureregulating section including the means for generating the relationtable, a stage for heating or cooling a substrate mounted on the stage,a shutter provided proximate to a surface of the substrate received onthe stage only during temperature measurement for enabling specularreflection relative to the wavelength to be measured, and a secondinfrared radiation thermometer for measuring radiation heat radiatedfrom the opposite surface of the substrate received on the stage, themeans for controlling processing of the substrate including temperaturecontrol means for obtaining a temperature of the substrate from anoutput from the second infrared radiation thermometer of the substratetemperature regulating section with reference to the relation table andfor controlling the heating or cooling means of the substratetemperature regulating section so as to enable a temperature of thesubstrate to reach a target temperature, and a film forming processingsection for receiving the substrate which has reached the targettemperature and for performing film formation processing of thesubstrate to form a film thereon.
 35. A processing device for asubstrate comprising:a substrate emissivity measuring section includinga stage for mounting thereon a substrate having a known temperature, anda first infrared radiation thermometer for measuring a radiation heatradiated from a surface of the mounted substrate; a substratetemperature regulating section including table preparing means forpreparing, on the basis of an emissivity of the substrate at the knowntemperature provided by the substrate emissivity measuring section, arelation table representative of a relation between a substratetemperature within a temperature range to be measured and an estimatedoutput value of by an infrared radiation thermometer when the substrateis at the known temperature during formation of a film thereon, and forstoring the relation table, a stage provided with means for heating orcooling a substrate mounted thereon, and a second infrared radiationthermometer for measuring a radiation heat radiated from the surface ofthe mounted substrate; a temperature controlling section for obtaining atemperature of the substrate from an output of the second infraredradiation thermometer with reference to the relation table and forcontrolling said heating or cooling means of the substrate temperatureregulating section so as to enable a temperature of the substrate toreach a target temperature; and a film-forming processing section forreceiving the substrate which has reached the target temperature and forperforming film-formation processing of the substrate to form a filmthereon.
 36. A processing device according to claim 35, wherein thesubstrate emissivity measuring section includes a shutter providedproximate to an opposite surface of the mounted substrate for enablingspecular reflection relative to a wavelength of an infrared ray radiatedfrom the substrate to be measured, and the substrate temperatureregulating section includes a shutter provided proximate to the oppositesurface of the mounted substrate only during temperature measurement andfor enabling specular reflection relative to the wavelength to bemeasured.
 37. A processing device according to claim 36, wherein thesubstrate is a silicon wafer.
 38. A processing device according to claim36, wherein a tube for intercepting external stray light is provided inan optical path between the substrate and the first and second infraredradiation thermometers for measuring the radiation heat radiated fromthe opposite surface of the substrate.
 39. A processing device accordingto claim 38, wherein an inner wall of the tube for intercepting theexternal stray light is treated so that the inner wall enables specularreflection.
 40. A processing device according to claim 36, wherein thetable preparing means provides a relation between the temperature andthe emissivity of the substrate which linearly approximates a relationbetween the emissivity of the substrate at the known temperatureprovided by the substrate emissivity measuring section and theemissivity of the substrate which takes on a constant value when thesubstrate is at a proper temperature, prepares on the basis of a theoryof black body radiation, a relation table representative of a relationbetween a substrate temperature within a temperature range to bemeasured and an estimated output value of the infrared radiationthermometer when the substrate is at the known temperature during filmformation and stores the relation table.
 41. A processing deviceaccording to claim 35, wherein the table preparing means provides arelation between the temperature and the emissivity of the substratewhich linearly approximates a relation between the emissivity of thesubstrate at the known temperature provided by the substrate emissivitymeasuring section and the emissivity of the substrate which takes on aconstant value when the substrate is at a proper temperature, andprepares on the basis of a theory of black body radiation, a relationtable representative of a relation between a substrate temperaturewithin a temperature range to be measured and an estimated output valueof the infrared radiation thermometer when the substrate is at the knowntemperature during film formation.
 42. A processing device for asubstrate comprising:a substrate emissivity measuring section includinga stage for mounting thereon a substrate having a known temperature, afirst infrared radiation thermometer for measuring a radiation heatradiated from an opposite surface of the mounted substrate, and anemissivity computing section for computing an emissivity of thesubstrate at the known temperature from an output from said firstinfrared radiation thermometer; a substrate temperature regulatingsection including a stage provided with means for heating a substratemounted thereon, and a heating controlling section for controlling saidheating means with reference to a graph which is previously prepared andstored on the basis of the emissivity of the substrate at the knowntemperature provided by the substrate emissivity measuring section, thegraph being representative of a relation between the emissivity of thesubstrate and a heating time required to make said substrate reach atarget temperature with a constant electrical power supplied; and afilm-forming processing section for applying film forming processing toa substrate received therein.
 43. A processing device according to claim42, wherein the substrate emissivity measuring section further includesa shutter provided proximate to a surface of the mounted substrate forenabling specular reflection relative to a wavelength of an infrared rayradiated from said substrate to be measured.
 44. A processing deviceaccording to claim 43, wherein the film-forming processing sectionincludes:a stage provided with means for applying film-formingprocessing to a substrate mounted thereon; a second infrared radiationthermometer for measuring a radiation heat radiated from an oppositesurface of the mounted substrate; a substrate temperature calculatingsection for preparing, on the basis of the emissivity of the substrateat the known temperature provided by the substrate emissivity measuringsection, a relation table representative of a relation between asubstrate temperature within a temperature range to be measured and anestimated output value of an infrared radiation thermometer when thesubstrate is at the known temperature during film formation, for storingthe relation table, and for obtaining, with reference to the relationtable, a temperature of the substrate from an output from said secondinfrared radiation thermometer when the substrate is received in thefilm-forming processing section; and a decision section for comparingthe temperature of the substrate provided by the substrate temperaturecalculating section with a target temperature of the heating controllingsection and for determining whether a heating operation is appropriate.45. A processing device according to claim 44, wherein the substratetemperature calculating section provides a relation between thetemperature and the emissivity of the substrate which linearlyapproximates a relation between the emissivity of the substrate at theknown temperature provided by the substrate emissivity measuring sectionand the emissivity of the substrate which takes on a constant value whenthe substrate is at a proper temperature, prepares on the basis of atheory of black body radiation a relation table representative of arelation between a substrate temperature within a temperature range tobe measured and an estimated output value of an infrared radiationthermometer when the substrate is at the known temperature, stores saidrelation tables and provides, with reference to the relation table, thetemperature of the substrate from the output from the second infraredradiation thermometer when the substrate is received in the film-formingprocessing section.
 46. A processing device according to claim 44,wherein the heating controlling section controls the heating means withreference to a graph which is previously prepared and stored on thebasis of the emissivity of said substrate at the known temperatureprovided by the substrate emissivity measuring section, the graph beingrepresentative of a relation between the emissivity of the substrate anda heating electrical power required within a constant heating time tomake a temperature of the substrate reach a target temperature.
 47. Aprocessing device according to claim 43, wherein the heating controllingsection controls the heating means with reference to a graph which ispreviously prepared and stored on the basis of the emissivity of saidsubstrate at the known temperature provided by the substrate emissivitymeasuring section, the graph being representative of a relation betweenthe emissivity of the substrate and a heating electrical power requiredwithin a constant heating time to make a temperature of the substratereach a target temperature.
 48. A processing device according to claim42, wherein the heating controlling section controls the heating meanswith reference to a graph which is previously prepared and stored on thebasis of the emissivity of said substrate at the known temperatureprovided by the substrate emissivity measuring section, the graph beingrepresentative of a relation between the emissivity of the substrate anda heating electrical power required within a constant heating time tomake a temperature of the substrate reach a target temperature.